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MT29F128G08AMCABK3-10ITZ:A

MT29F128G08AMCABK3-10ITZ:A

Product Overview

Category

The MT29F128G08AMCABK3-10ITZ:A belongs to the category of NAND Flash Memory.

Use

It is used for storing data in electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity
  • Fast read and write speeds
  • Low power consumption
  • Compact package size

Package

The MT29F128G08AMCABK3-10ITZ:A is typically available in a small form factor package suitable for surface mount technology (SMT) assembly.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity data storage for various electronic devices.

Packaging/Quantity

The MT29F128G08AMCABK3-10ITZ:A is commonly packaged in trays or reels and is available in varying quantities based on customer requirements.

Specifications

  • Storage Capacity: 128 gigabits (16 gigabytes)
  • Interface: Parallel or Serial
  • Voltage: 3.3V
  • Operating Temperature: -40°C to 85°C
  • Data Retention: Up to 10 years
  • Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The detailed pin configuration of the MT29F128G08AMCABK3-10ITZ:A includes pins for power supply, data input/output, control signals, and other interface connections. A comprehensive pinout diagram is provided in the product datasheet.

Functional Features

  • Page Read and Program Operations
  • Block Erase Operation
  • Internal Data Management
  • Error Correction Code (ECC) Support
  • Wear Leveling Algorithms

Advantages

  • High storage capacity
  • Fast data transfer rates
  • Low power consumption
  • Reliable data retention
  • Compatibility with various electronic devices

Disadvantages

  • Limited endurance compared to other non-volatile memory technologies
  • Susceptible to physical damage if mishandled

Working Principles

The MT29F128G08AMCABK3-10ITZ:A operates based on the principles of NAND flash memory technology, utilizing floating gate transistors to store data in a non-volatile manner. When data is written, electrons are trapped in the floating gate, altering the transistor's conductive properties. Reading data involves detecting the state of these transistors to retrieve stored information.

Detailed Application Field Plans

The MT29F128G08AMCABK3-10ITZ:A is widely used in applications requiring high-capacity data storage, such as: - Mobile Devices - Digital Cameras - Solid-State Drives (SSDs) - Industrial Control Systems - Automotive Infotainment Systems

Detailed and Complete Alternative Models

Some alternative models to the MT29F128G08AMCABK3-10ITZ:A include: - Samsung K9GAG08U0E - Micron MT29F128G08CFABA - Toshiba TH58NVG7D2FLA89

In conclusion, the MT29F128G08AMCABK3-10ITZ:A offers high-capacity and reliable data storage for a wide range of electronic devices, making it a crucial component in modern technology.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F128G08AMCABK3-10ITZ:A v technických řešeních

  1. What is the MT29F128G08AMCABK3-10ITZ:A?

    • The MT29F128G08AMCABK3-10ITZ:A is a 128Gb NAND flash memory device designed for use in various technical solutions.
  2. What are the key features of the MT29F128G08AMCABK3-10ITZ:A?

    • It features a high-density storage capacity, fast data transfer rates, and reliable performance suitable for embedded applications.
  3. What are the typical applications for the MT29F128G08AMCABK3-10ITZ:A?

    • This NAND flash memory device is commonly used in automotive, industrial, networking, and consumer electronics applications.
  4. What is the interface protocol supported by the MT29F128G08AMCABK3-10ITZ:A?

    • It supports a standard NAND flash interface, making it compatible with a wide range of systems and controllers.
  5. What are the operating voltage and temperature range of the MT29F128G08AMCABK3-10ITZ:A?

    • It operates at a voltage range of 2.7V to 3.6V and can withstand a wide temperature range, making it suitable for harsh environments.
  6. Does the MT29F128G08AMCABK3-10ITZ:A support wear leveling and error correction?

    • Yes, it incorporates advanced wear-leveling algorithms and error correction techniques to ensure data integrity and longevity.
  7. Can the MT29F128G08AMCABK3-10ITZ:A be used for code storage in embedded systems?

    • Absolutely, it is well-suited for code storage in embedded systems due to its high capacity and reliable performance.
  8. What are the available package options for the MT29F128G08AMCABK3-10ITZ:A?

    • It is available in industry-standard packages such as TSOP and BGA, offering flexibility for different design requirements.
  9. Are there any specific considerations for integrating the MT29F128G08AMCABK3-10ITZ:A into a design?

    • Designers should consider proper signal routing, power supply decoupling, and adherence to recommended operating conditions for optimal performance.
  10. Is the MT29F128G08AMCABK3-10ITZ:A compatible with common NAND flash controllers?

    • Yes, it is designed to be compatible with a wide range of NAND flash controllers, simplifying integration into existing systems.