MT29F128G08AUCBBH3-12:B

Product Overview

Category

MT29F128G08AUCBBH3-12:B belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F128G08AUCBBH3-12:B offers a storage capacity of 128 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: The NAND flash memory technology ensures durability and long-term reliability.
• Low power consumption: It consumes minimal power, making it suitable for battery-powered devices.
• Compact package: The product comes in a small form factor, enabling easy integration into different devices.

Package and Quantity

MT29F128G08AUCBBH3-12:B is available in a surface-mount package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Part Number: MT29F128G08AUCBBH3-12:B
• Memory Type: NAND Flash
• Storage Capacity: 128 GB
• Interface: Universal Flash Storage (UFS)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)

Pin Configuration

The detailed pin configuration for MT29F128G08AUCBBH3-12:B is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. RE: Read Enable
5. WE: Write Enable
6. A0-A18: Address Inputs
7. DQ0-DQ15: Data Inputs/Outputs
8. R/B: Ready/Busy Status
9. CLE: Command Latch Enable
10. ALE: Address Latch Enable

Note: The pin configuration may vary depending on the specific manufacturer's implementation.

Functional Features

• High-speed read and write operations
• Error correction and detection mechanisms for data integrity
• Wear-leveling algorithms to distribute data evenly across memory cells
• Bad block management for efficient use of available storage space
• Block erase and program operations for data modification
• Power-saving features to minimize energy consumption during idle periods

Advantages and Disadvantages

Advantages

• Large storage capacity allows for ample data storage.
• Fast data transfer rate enables quick access to stored information.
• Reliable performance ensures data integrity and durability.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates easy integration into various electronic devices.

Disadvantages

• NAND flash memory has a limited number of write cycles, which can affect its lifespan.
• Costlier compared to other types of memory technologies.
• Susceptible to data loss in case of power failure or improper handling.

Working Principles

MT29F128G08AUCBBH3-12:B utilizes NAND flash memory technology. It consists of numerous memory cells organized in a grid-like structure. Each cell stores multiple bits of data using electrical charges. When reading data, the controller applies voltages to specific cells and measures the resulting current to determine the stored information. During writing, the controller modifies the charge level of the cells to store new data.

Detailed Application Field Plans

MT29F128G08AUCBBH3-12:B finds applications in various fields, including: 1. Mobile devices: Smartphones, tablets, and portable media players. 2. Solid-state drives (SSDs): Used as primary storage in computers and laptops. 3. Digital cameras: Provides high-capacity storage for photos and videos. 4. Automotive electronics: Used for data storage in infotainment systems and navigation devices. 5. Industrial equipment: Embedded in control systems and data loggers.

Detailed Alternative Models

1. MT29F128G08AUCBBH3-12:A
2. MT29F128G08AUCBBH3-12:C
3. MT29F128G08AUCBBH3-12:D
4. MT29F128G08AUCBBH3-12:E

These alternative models offer similar specifications and functionality to MT29F128G08AUCBBH3-12:B, providing options for different sourcing or compatibility requirements.

In conclusion, MT29F128G08AUCBBH3-12:B is a NAND flash memory product with a high storage capacity, fast data transfer rate, and reliable performance. It finds applications in various electronic devices and offers advantages such as large storage capacity and low power consumption. However, it