MT29F128G08CBCABH6-6:A

Basic Information Overview

Category: Memory Device
Use: Data storage and retrieval
Characteristics: High capacity, fast read/write speeds
Package: BGA (Ball Grid Array)
Essence: Non-volatile memory
Packaging/Quantity: Individual units or reels of multiple units

Specifications

• Model: MT29F128G08CBCABH6-6:A
• Capacity: 128 gigabits (16 gigabytes)
• Interface: NAND Flash
• Voltage: 3.3V
• Operating Temperature: -40°C to +85°C
• Speed: Up to 200 megabytes per second (read), up to 100 megabytes per second (write)

Detailed Pin Configuration

The MT29F128G08CBCABH6-6:A has a specific pin configuration that allows for proper connection and communication with other devices. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ15: Data inputs/outputs
8. R/B: Ready/busy status
9. CLE: Command latch enable
10. ALE: Address latch enable
11. WP: Write protect
12. RP: Reset/power down
13. NC: No connection

Functional Features

• High-density storage: The MT29F128G08CBCABH6-6:A offers a large capacity of 128 gigabits, allowing for the storage of vast amounts of data.
• Fast read/write speeds: With read speeds of up to 200 megabytes per second and write speeds of up to 100 megabytes per second, data can be accessed and written quickly.
• Non-volatile memory: The essence of the MT29F128G08CBCABH6-6:A lies in its non-volatile nature, meaning that stored data is retained even when power is removed.

Advantages and Disadvantages

Advantages: - High storage capacity - Fast read/write speeds - Non-volatile memory ensures data retention

Disadvantages: - Relatively high cost compared to lower-capacity memory devices - Limited compatibility with certain systems or interfaces

Working Principles

The MT29F128G08CBCABH6-6:A utilizes NAND Flash technology for data storage. It consists of multiple memory cells organized into blocks, which can be individually erased and programmed. When data is written, electrical charges are stored in the memory cells, representing binary information. During read operations, these charges are detected and converted back into usable data.

Detailed Application Field Plans

The MT29F128G08CBCABH6-6:A finds application in various fields, including but not limited to: 1. Solid-state drives (SSDs) 2. Embedded systems 3. Consumer electronics 4. Automotive applications 5. Industrial equipment

Detailed and Complete Alternative Models

1. MT29F128G08CBABA: Similar specifications, different package (TSOP)
2. MT29F128G08CBACBH6-6:A: Similar specifications, extended temperature range (-40°C to +105°C)
3. MT29F128G08CBACBH7-6:A: Similar specifications, extended temperature range (-40°C to +105°C), higher endurance rating

These alternative models offer similar functionality and characteristics to the MT29F128G08CBCABH6-6:A, providing options for different application requirements.

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