MT29F128G08CECABH1-12IT:A

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile
  • High capacity
  • Fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Flash memory
• Packaging/Quantity: Varies based on manufacturer

Specifications

• Model: MT29F128G08CECABH1-12IT:A
• Capacity: 128GB
• Interface: NAND Flash
• Voltage: 3.3V
• Speed: Up to 120MB/s (Read), up to 80MB/s (Write)
• Operating Temperature: -40°C to +85°C
• Package Type: 63-ball BGA

Detailed Pin Configuration

The MT29F128G08CECABH1-12IT:A has a 63-ball BGA package with the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | GND | Ground | | 3 | A0-A18 | Address inputs | | 4 | CLE | Command latch enable | | 5 | ALE | Address latch enable | | 6 | CE# | Chip enable | | 7 | RE# | Read enable | | 8 | WE# | Write enable | | 9-16 | DQ0-DQ7 | Data input/output | | 17 | R/B# | Ready/busy status | | 18-25 | NC | No connection | | 26 | WP# | Write protect | | 27 | VCCQ | Power supply voltage for I/O | | 28 | GNDQ | Ground for I/O | | 29-63 | NC | No connection |

Functional Features

• High-speed data transfer
• Reliable and durable storage
• Low power consumption
• Error correction capabilities
• Wear-leveling algorithms for extended lifespan

Advantages

• Large storage capacity
• Fast read/write speeds
• Non-volatile memory retains data even when power is lost
• Suitable for various applications due to its reliability and durability

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance (number of write cycles) compared to other memory types

Working Principles

The MT29F128G08CECABH1-12IT:A utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density storage. The data is written and read by applying electrical charges to the memory cells.

Detailed Application Field Plans

The MT29F128G08CECABH1-12IT:A is commonly used in various electronic devices, including: - Solid-state drives (SSDs) - USB flash drives - Memory cards - Embedded systems - Industrial control systems

Detailed and Complete Alternative Models

• MT29F256G08CECABH1-12IT:A (256GB capacity)
• MT29F512G08CECABH1-12IT:A (512GB capacity)
• MT29F1T08CECABH1-12IT:A (1TB capacity)

Note: The above alternative models are provided as examples and may not represent an exhaustive list of alternatives available in the market.

This entry provides an overview of the MT29F128G08CECABH1-12IT:A memory device, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.