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MT29F16G08ADACAH4:C
Product Overview
- Category: NAND Flash Memory
- Use: Data storage in electronic devices
- Characteristics: High-speed, non-volatile, large capacity
- Package: Chip form
- Essence: Reliable data storage solution
- Packaging/Quantity: Varies based on manufacturer and order quantity
Specifications
- Capacity: 16GB
- Interface: Parallel
- Voltage: 3.3V
- Speed: Up to 50ns
- Temperature Range: Industrial (-40°C to 85°C)
Detailed Pin Configuration
- Pin 1: /CE (Chip Enable)
- Pin 2: ALE (Address Latch Enable)
- Pin 3: CLE (Command Latch Enable)
- Pin 4: RE (Read Enable)
- Pin 5: WE (Write Enable)
- Pin 6-13: Address Inputs
- Pin 14-28: Data I/O
Functional Features
- High-Speed Operation: Enables fast data transfer
- Reliability: Built-in error correction and wear-leveling algorithms
- Low Power Consumption: Suitable for battery-powered devices
- Extended Temperature Range: Can operate in harsh environments
Advantages and Disadvantages
Advantages
- Large capacity
- High-speed operation
- Low power consumption
Disadvantages
- Limited endurance compared to other memory types
- Higher cost per bit compared to HDDs
Working Principles
MT29F16G08ADACAH4:C operates on the principles of NAND flash memory, utilizing floating gate transistors to store data as electrical charges. When a voltage is applied, the charge is trapped, representing a binary value.
Detailed Application Field Plans
MT29F16G08ADACAH4:C is suitable for various applications including:
- Solid-state drives (SSDs)
- Digital cameras
- Industrial automation systems
- Medical devices
- Automotive infotainment systems
Detailed and Complete Alternative Models
- Samsung K9K8G08U0D
- Toshiba TH58NVG7D2FLA89
This NAND flash memory chip provides high-speed, reliable data storage for a wide range of electronic devices, making it a versatile solution for modern technology needs.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F16G08ADACAH4:C v technických řešeních
What is the MT29F16G08ADACAH4:C?
- The MT29F16G08ADACAH4:C is a 16Gb NAND Flash memory device designed for use in various technical solutions.
What are the key features of the MT29F16G08ADACAH4:C?
- The key features include a 3.3V power supply, x8 and x16 I/O interface options, and support for various technical applications.
In what types of technical solutions can the MT29F16G08ADACAH4:C be used?
- The MT29F16G08ADACAH4:C can be used in embedded systems, automotive applications, industrial equipment, and other devices requiring non-volatile storage.
What is the maximum data transfer rate of the MT29F16G08ADACAH4:C?
- The MT29F16G08ADACAH4:C supports a maximum data transfer rate of up to 52MB/s, making it suitable for high-performance applications.
Does the MT29F16G08ADACAH4:C support wear leveling and error correction?
- Yes, the MT29F16G08ADACAH4:C includes built-in wear leveling and error correction capabilities to ensure data integrity and longevity.
What is the operating temperature range of the MT29F16G08ADACAH4:C?
- The MT29F16G08ADACAH4:C is designed to operate within a wide temperature range, typically from -40°C to 85°C, making it suitable for harsh environments.
Can the MT29F16G08ADACAH4:C be used in automotive applications?
- Yes, the MT29F16G08ADACAH4:C is AEC-Q100 qualified and suitable for use in automotive electronics, such as infotainment systems and instrument clusters.
What tools or development kits are available for integrating the MT29F16G08ADACAH4:C into a technical solution?
- Micron provides development kits, reference designs, and technical documentation to assist with the integration of the MT29F16G08ADACAH4:C into various applications.
Is the MT29F16G08ADACAH4:C compatible with standard NAND Flash interfaces?
- Yes, the MT29F16G08ADACAH4:C is compatible with standard NAND Flash interfaces, allowing for easy integration into existing designs and systems.
What are the typical use cases for the MT29F16G08ADACAH4:C in industrial applications?
- In industrial applications, the MT29F16G08ADACAH4:C can be used for data logging, firmware storage, system booting, and other storage-intensive tasks.