MT29F16G08ADBCAH4:C

Product Overview

Category

MT29F16G08ADBCAH4:C belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F16G08ADBCAH4:C offers a storage capacity of 16 gigabytes.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: The NAND flash memory technology ensures durability and reliability.
• Low power consumption: It consumes minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F16G08ADBCAH4:C is available in a compact package, enabling easy integration into different devices.

Packaging/Quantity

The MT29F16G08ADBCAH4:C is typically packaged in small surface-mount packages, such as ball grid array (BGA) or thin small outline package (TSOP). The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 16 gigabytes (GB)
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: BGA or TSOP
• Data Transfer Rate: Up to 400 megabits per second (Mbps)

Detailed Pin Configuration

The MT29F16G08ADBCAH4:C has a specific pin configuration that facilitates its integration into electronic devices. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground connection
3. CE: Chip enable
4. CLE: Command latch enable
5. ALE: Address latch enable
6. RE: Read enable
7. WE: Write enable
8. R/B: Ready/Busy status
9. DQ0-DQ7: Data input/output lines
10. WP: Write protect
11. RST: Reset

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments.
• Block Erase Operation: Enables the erasure of entire blocks of data.
• Random Access: Provides random access to any location within the memory array.
• Error Correction Code (ECC): Implements ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: Distributes write operations evenly across the memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity for data-intensive applications.
• Fast data transfer rate for quick access to stored information.
• Low power consumption, suitable for battery-powered devices.
• Compact package for easy integration into various electronic devices.
• Reliable performance due to NAND flash memory technology.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles.
• Higher cost per gigabyte compared to other types of memory.
• Susceptible to data loss if not properly managed or protected.

Working Principles

The MT29F16G08ADBCAH4:C utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. To read data, the controller applies voltages to specific cells and measures the resulting electrical current. Writing data involves applying precise voltage levels to program or erase individual cells.

Detailed Application Field Plans

The MT29F16G08ADBCAH4:C is widely used in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F16G08ABACAH4:C
2. MT29F16G08ADBCBH4:C
3. MT29F16G08ABACBH4:C
4. MT29F16G08ADBCCH4:C
5. MT29F16G08ABACCH4:C

These alternative models offer similar specifications and functionality to the MT29F16G08ADBCAH4:C, providing options for different design requirements and compatibility.

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