Micron Technology Inc.
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MT29F16G08ADBCAH4:C TR

MT29F16G08ADBCAH4:C TR

Basic Information Overview

  • Category: Memory Device
  • Use: Data storage and retrieval
  • Characteristics: Non-volatile, high capacity, fast access speed
  • Package: BGA (Ball Grid Array)
  • Essence: NAND Flash Memory
  • Packaging/Quantity: Tape and Reel, 2500 units per reel

Specifications

  • Capacity: 16GB
  • Organization: 8 Gb x 2
  • Interface: Parallel
  • Voltage Supply: 2.7V - 3.6V
  • Access Time: 25 ns
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT29F16G08ADBCAH4:C TR has a total of 48 pins. The pin configuration is as follows:

  1. VCCQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. WE#
  11. RE#
  12. CLE
  13. ALE
  14. CE#
  15. R/B#
  16. WP#
  17. VSSQ
  18. NC
  19. NC
  20. NC
  21. NC
  22. NC
  23. NC
  24. NC
  25. NC
  26. NC
  27. NC
  28. NC
  29. NC
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. VCC

Functional Features

  • High-speed data transfer
  • Reliable and durable storage
  • Error correction capabilities
  • Wear-leveling algorithms for extended lifespan
  • Block erase and program operations

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast access speed
  • Non-volatile memory (retains data even when power is off)
  • Compact package size
  • Suitable for various applications

Disadvantages

  • Limited endurance (limited number of write/erase cycles)
  • Higher cost compared to other memory technologies

Working Principles

The MT29F16G08ADBCAH4:C TR is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density storage. The memory cells are accessed using an address and data bus, enabling read and write operations.

Detailed Application Field Plans

The MT29F16G08ADBCAH4:C TR is widely used in various electronic devices and systems that require non-volatile data storage. Some common application fields include: - Solid-state drives (SSDs) - USB flash drives - Embedded systems - Consumer electronics (e.g., smartphones, tablets) - Automotive infotainment systems

Detailed and Complete Alternative Models

  • MT29F16G08ABACAWP:A TR
  • MT29F16G08ABACAWP:B TR
  • MT29F16G08ABACAWP:C TR
  • MT29F16G08ABACAWP:D TR
  • MT29F16G08ABACAWP:E TR
  • MT29F16G08ABACAWP:F TR
  • MT29F16G08ABACAWP:G TR
  • MT29F16G08ABACAWP:H TR

These alternative models offer similar specifications and functionality, providing flexibility for different design requirements.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F16G08ADBCAH4:C TR v technických řešeních

Sure! Here are 10 common questions and answers related to the application of MT29F16G08ADBCAH4:C TR in technical solutions:

  1. Q: What is MT29F16G08ADBCAH4:C TR? A: MT29F16G08ADBCAH4:C TR is a specific model of NAND flash memory chip manufactured by Micron Technology.

  2. Q: What are the key features of MT29F16G08ADBCAH4:C TR? A: Some key features include a capacity of 16GB, SLC (Single-Level Cell) technology, and a high-speed interface for data transfer.

  3. Q: In what applications can MT29F16G08ADBCAH4:C TR be used? A: MT29F16G08ADBCAH4:C TR can be used in various applications such as embedded systems, automotive electronics, industrial control systems, and consumer electronics.

  4. Q: What is the operating voltage range of MT29F16G08ADBCAH4:C TR? A: The operating voltage range is typically between 2.7V and 3.6V.

  5. Q: What is the maximum read and write speed of MT29F16G08ADBCAH4:C TR? A: The maximum read speed is typically around 50MB/s, while the maximum write speed is around 20MB/s.

  6. Q: Does MT29F16G08ADBCAH4:C TR support wear-leveling algorithms? A: Yes, MT29F16G08ADBCAH4:C TR supports wear-leveling algorithms to ensure even distribution of write/erase cycles across the memory cells, prolonging its lifespan.

  7. Q: Can MT29F16G08ADBCAH4:C TR withstand extreme temperatures? A: Yes, MT29F16G08ADBCAH4:C TR is designed to operate reliably in a wide temperature range, typically from -40°C to 85°C.

  8. Q: What is the data retention period of MT29F16G08ADBCAH4:C TR? A: The data retention period is typically specified as 10 years, ensuring long-term reliability of stored data.

  9. Q: Does MT29F16G08ADBCAH4:C TR support error correction codes (ECC)? A: Yes, MT29F16G08ADBCAH4:C TR supports ECC to detect and correct errors that may occur during data transfer.

  10. Q: Can MT29F16G08ADBCAH4:C TR be used as a boot device in embedded systems? A: Yes, MT29F16G08ADBCAH4:C TR can be used as a boot device due to its fast read speed and reliable performance.

Please note that the answers provided here are general and may vary depending on specific implementation details and requirements.