MT29F1G08ABBDAH4-IT:D TR

Product Overview

Category

MT29F1G08ABBDAH4-IT:D TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G08ABBDAH4-IT:D TR offers a storage capacity of 1 gigabit (1 Gb), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and longevity.
• Low power consumption: The MT29F1G08ABBDAH4-IT:D TR is optimized for low power consumption, making it suitable for battery-powered devices.
• Compact package: This NAND flash memory comes in a compact package, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F1G08ABBDAH4-IT:D TR is typically packaged in surface mount technology (SMT) packages, such as ball grid array (BGA) or thin small outline package (TSOP). The exact packaging type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from hundreds to thousands of units per package.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F1G08ABBDAH4-IT:D TR
• Memory Type: NAND Flash
• Storage Capacity: 1 Gb
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA or TSOP

Detailed Pin Configuration

The MT29F1G08ABBDAH4-IT:D TR has a specific pin configuration that facilitates its integration into electronic devices. The following table provides a detailed overview of the pin functions:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VCC | Power Supply (2.7V - 3.6V) | | 2 | GND | Ground | | 3 | A0-A18 | Address Inputs | | 4 | CE# | Chip Enable | | 5 | CLE | Command Latch Enable | | 6 | ALE | Address Latch Enable | | 7 | RE# | Read Enable | | 8 | WE# | Write Enable | | 9 | R/B# | Ready/Busy Status | | 10 | DQ0-DQ7 | Data Input/Output |

Note: This is a simplified pin configuration, and additional pins may be present depending on the specific features and requirements of the device.

Functional Features

• Page Program Operation: The MT29F1G08ABBDAH4-IT:D TR supports page program operations, allowing data to be written in small increments.
• Block Erase Operation: It enables block erase operations, which allow for efficient erasure of large chunks of data.
• Random Access: This NAND flash memory allows random access to individual memory cells, enabling quick retrieval of specific data.
• Error Correction Code (ECC): The product incorporates ECC algorithms to ensure data integrity and minimize errors during read and write operations.
• Wear-Leveling: The MT29F1G08ABBDAH4-IT:D TR implements wear-leveling techniques to evenly distribute write and erase operations across memory cells, extending the overall lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate ensures efficient data processing.
• Reliable performance ensures data integrity and longevity.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package allows for easy integration into various electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may limit its lifespan in certain applications.
• Relatively higher cost compared to other types of non-volatile memory.

Working Principles

The MT29F1G08ABBDAH4-IT:D TR utilizes NAND flash memory technology, which is based on the principle of storing data in floating-gate transistors. These transistors can retain charge even when the power is turned off, allowing for non-volatile data storage. The memory cells are organized in a grid-like structure, with each cell capable of storing multiple bits of data. Data is written by applying appropriate voltage levels to