MT29F1G16ABBDAH4-ITX:D TR

Product Overview

Category

MT29F1G16ABBDAH4-ITX:D TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G16ABBDAH4-ITX:D TR offers a storage capacity of 1 gigabit (1 Gb).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with low power consumption.
• Compact package: The MT29F1G16ABBDAH4-ITX:D TR comes in a small form factor, making it suitable for space-constrained applications.
• Durable design: It is designed to withstand harsh environmental conditions, ensuring data integrity and longevity.

Package and Quantity

The MT29F1G16ABBDAH4-ITX:D TR is available in a surface-mount package. The quantity may vary depending on the manufacturer or supplier.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F1G16ABBDAH4-ITX:D TR
• Memory Type: NAND Flash
• Density: 1 Gb
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48

Detailed Pin Configuration

The pin configuration of the MT29F1G16ABBDAH4-ITX:D TR is as follows:

1. VCC
2. ALE
3. CLE
4. CE#
5. RE#
6. WE#
7. WP#
8. R/B#
9. I/O0
10. I/O1
11. I/O2
12. I/O3
13. I/O4
14. I/O5
15. I/O6
16. I/O7
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• High-speed data transfer: The MT29F1G16ABBDAH4-ITX:D TR offers fast read and write speeds, enabling efficient data access.
• Error correction: It incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear leveling: This NAND flash memory utilizes wear leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the device.
• Bad block management: It includes mechanisms for identifying and managing bad blocks, enhancing overall storage efficiency.
• Power-saving mode: The MT29F1G16ABBDAH4-ITX:D TR supports power-saving features, reducing energy consumption during idle periods.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Compact form factor
• Durable design

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Higher cost per gigabyte compared to other storage technologies like hard disk drives.

Working Principles

The MT29F1G16ABBDAH4-ITX:D TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using a floating-gate transistor. When data is written, electrons are trapped in the floating gate, representing a binary value. To read the data, the charge level of the floating gate is measured.

Detailed Application Field Plans

The MT29F1G16ABBDAH4-ITX:D TR finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Alternative Models

Here are some alternative models that offer similar functionality: - MT29F1G08ABADAWP-ITX - MT29F1G08AB