MT29F1G16ABBEAH4-ITX:E

Product Overview

Category

MT29F1G16ABBEAH4-ITX:E belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G16ABBEAH4-ITX:E offers a storage capacity of 1 gigabit (1 Gb), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: The product is designed to provide reliable and consistent performance over an extended period.
• Compact package: The MT29F1G16ABBEAH4-ITX:E comes in a compact form factor, making it suitable for space-constrained devices.
• Low power consumption: This NAND flash memory is energy-efficient, contributing to longer battery life in portable devices.

Package and Quantity

The MT29F1G16ABBEAH4-ITX:E is available in a small outline integrated circuit (SOIC) package. It is typically sold in reels containing a specific quantity, usually ranging from 100 to 1000 units per reel.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Gb
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SOIC
• Pin Count: 48

Detailed Pin Configuration

The MT29F1G16ABBEAH4-ITX:E has a total of 48 pins. Here is a detailed pin configuration:

1. VCC
2. VCCQ
3. WE#
4. CLE
5. ALE
6. RE#
7. CE#
8. R/B#
9. WP#
10. NC
11. NC
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. GND
47. GND
48. NC

Functional Features

• Page Read/Program/Erase: The MT29F1G16ABBEAH4-ITX:E supports page-level read, program, and erase operations, allowing for efficient data management.
• Block Management: This NAND flash memory incorporates advanced block management techniques to optimize performance and extend the lifespan of the device.
• Error Correction Code (ECC): ECC algorithms are implemented to ensure data integrity and reliability during read and write operations.
• Wear-Leveling: The product employs wear-leveling algorithms to distribute write operations evenly across memory blocks, preventing premature wear-out.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate facilitates quick read and write operations.
• Reliable performance ensures consistent data access.
• Compact package suits space-constrained devices.
• Low power consumption contributes to longer battery life.

Disadvantages

• Limited compatibility with certain legacy systems that do not support NAND flash memory.

Working Principles

The MT29F1G16ABBEAH4-ITX:E operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, where each cell stores multiple bits of data by trapping electrons in a floating gate. The presence or absence of trapped electrons determines the stored data value (0 or 1). Data can be read, programmed, or erased at the page level using specific voltage levels and control signals.

Detailed Application Field Plans

The MT29F1G16ABBEAH4-ITX:E finds applications in various electronic devices, including: - Smartphones - Tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Alternative Models

Here are some alternative models that offer similar functionality to the MT29F1G16ABBEAH4-ITX:E: - MT29F1G08ABADAWP-ITX - MT29F1G16ABCHD-ITX - MT29F1G16ABAEAW