MT29F1T08CUCABK8-6:A

Basic Information Overview

• Category: Memory chip
• Use: Data storage in electronic devices
• Characteristics:
  • Non-volatile memory
  • High capacity
  • Fast read and write speeds
• Package: Integrated circuit (IC)
• Essence: Stores digital information for long-term use
• Packaging/Quantity: Typically sold in reels or trays containing multiple chips

Specifications

• Model: MT29F1T08CUCABK8-6:A
• Capacity: 1 Terabit (128 Gigabytes)
• Organization: 8 planes, each with 1024 blocks
• Interface: Universal Flash Storage (UFS) 2.1
• Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Endurance: Up to 100,000 program/erase cycles
• Data Retention: Up to 10 years

Detailed Pin Configuration

The MT29F1T08CUCABK8-6:A chip has a total of 153 pins. Here is a detailed pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | VCCQ | Power supply voltage for I/O | | 3 | VSS | Ground | | 4 | VSSQ | Ground for I/O | | 5 | RE# | Read enable input | | 6 | WE# | Write enable input | | ... | ... | ... | | 153 | NC | No connection |

Functional Features

• High-speed data transfer: Supports UFS 2.1 interface for fast read and write operations.
• Error correction: Built-in error correction algorithms ensure data integrity.
• Wear leveling: Distributes write operations evenly across memory blocks to extend chip lifespan.
• Bad block management: Automatically detects and manages defective memory blocks.
• Power-saving mode: Includes low-power standby and sleep modes to conserve energy.

Advantages

• Large storage capacity: 1 Terabit allows for ample data storage in electronic devices.
• Fast data access: UFS 2.1 interface enables high-speed read and write operations.
• Reliable performance: Error correction and wear leveling features enhance data reliability.
• Versatile compatibility: Compatible with a wide range of electronic devices supporting UFS.

Disadvantages

• Cost: Higher cost compared to lower-capacity memory chips.
• Limited availability: May not be readily available in all markets or regions.

Working Principles

The MT29F1T08CUCABK8-6:A is based on NAND flash memory technology. It stores digital information by trapping electrons in floating gate transistors. When reading data, the charge level in each transistor is measured to determine the stored information. During writing, an electric field is applied to move electrons into or out of the floating gate, altering the charge level and thus changing the stored data.

Detailed Application Field Plans

The MT29F1T08CUCABK8-6:A memory chip finds applications in various electronic devices, including: - Smartphones and tablets - Solid-state drives (SSDs) - Digital cameras - Gaming consoles - Automotive infotainment systems

Detailed and Complete Alternative Models

• MT29F1G08ABADAWP-IT:A
• MT29F1G08ABAEAWP-IT:A
• MT29F1G08ABAFWP-IT:A
• MT29F1G08ABAGAWP-IT:A
• MT29F1G08ABAHAWP-IT:A

These alternative models offer similar specifications and functionality to the MT29F1T08CUCABK8-6:A, but with different capacities or package options.

Word count: 400 words