MT29F256G08CEECBH6-12:C

Basic Information Overview

Category: Memory Device
Use: Data storage and retrieval
Characteristics:
- Non-volatile
- High capacity
- High speed
- Low power consumption
Package: BGA (Ball Grid Array)
Essence: Flash memory chip
Packaging/Quantity: Single chip

Specifications

Model: MT29F256G08CEECBH6-12:C
Capacity: 256GB
Interface: NAND
Voltage: 3.3V
Speed: Up to 100MB/s (Read), up to 50MB/s (Write)
Operating Temperature: -40°C to +85°C
Endurance: 10,000 program/erase cycles
Data Retention: Up to 10 years

Detailed Pin Configuration

The MT29F256G08CEECBH6-12:C has a total of 48 pins. The pin configuration is as follows:

VCC
VCCQ
GND
CE#
RE#
WE#
CLE
ALE
WP#
R/B#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC

Functional Features

High-speed data transfer
Reliable and durable
Error correction capability
Wear-leveling algorithm for extended lifespan
Power-saving features

Advantages

Large storage capacity
Fast data access
Low power consumption
Compact package size
Suitable for various applications

Disadvantages

Limited program/erase cycles
Relatively high cost compared to other memory options

Working Principles

The MT29F256G08CEECBH6-12:C is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge applied to it. The data can be read, written, and erased electronically.

Detailed Application Field Plans

The MT29F256G08CEECBH6-12:C is widely used in various electronic devices that require non-volatile data storage, such as: - Solid-state drives (SSDs) - USB flash drives - Digital cameras - Mobile phones - Tablets - Industrial control systems

Detailed and Complete Alternative Models

MT29F128G08CBACAWP-IT:C
MT29F512G08CUABAWP-IT:C
MT29F1T08CUCABAWP-IT:C
MT29F2T08CUCABAWP-IT:C
MT29F4T08CUCABAWP-IT:C

These alternative models offer different capacities and features to suit specific application requirements.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F256G08CEECBH6-12:C v technických řešeních

Question: What is the capacity of the MT29F256G08CEECBH6-12:C?
Answer: The MT29F256G08CEECBH6-12:C has a capacity of 256 gigabits (32 gigabytes).
Question: What is the voltage requirement for the MT29F256G08CEECBH6-12:C?
Answer: The MT29F256G08CEECBH6-12:C operates at a voltage range of 2.7V to 3.6V.
Question: What is the interface used by the MT29F256G08CEECBH6-12:C?
Answer: The MT29F256G08CEECBH6-12:C uses a NAND Flash interface.
Question: What is the maximum operating frequency of the MT29F256G08CEECBH6-12:C?
Answer: The MT29F256G08CEECBH6-12:C can operate at a maximum frequency of 100 MHz.
Question: Does the MT29F256G08CEECBH6-12:C support wear-leveling algorithms?
Answer: Yes, the MT29F256G08CEECBH6-12:C supports wear-leveling algorithms to ensure even distribution of write/erase cycles.
Question: Can the MT29F256G08CEECBH6-12:C withstand high temperatures?
Answer: Yes, the MT29F256G08CEECBH6-12:C has a wide temperature range and can operate in extreme conditions.
Question: Is the MT29F256G08CEECBH6-12:C compatible with various operating systems?
Answer: Yes, the MT29F256G08CEECBH6-12:C is compatible with popular operating systems like Windows, Linux, and macOS.
Question: What is the typical data transfer rate of the MT29F256G08CEECBH6-12:C?
Answer: The MT29F256G08CEECBH6-12:C has a typical data transfer rate of up to 40 megabytes per second.
Question: Does the MT29F256G08CEECBH6-12:C support error correction codes (ECC)?
Answer: Yes, the MT29F256G08CEECBH6-12:C supports built-in ECC functionality for data integrity.
Question: Can the MT29F256G08CEECBH6-12:C be used in automotive applications?
Answer: Yes, the MT29F256G08CEECBH6-12:C is suitable for automotive applications due to its high reliability and temperature tolerance.