MT29F2G01AAAEDH4:E

Product Overview

Category

MT29F2G01AAAEDH4:E belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Compact size
• Low power consumption

Package

MT29F2G01AAAEDH4:E is available in a small form factor package, commonly known as a chip-scale package (CSP).

Essence

The essence of MT29F2G01AAAEDH4:E lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

This product is typically packaged individually and is available in various quantities depending on the requirements of the customer or manufacturer.

Specifications

• Storage Capacity: 2GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200MB/s (read), Up to 100MB/s (write)

Detailed Pin Configuration

1. VCC - Power supply voltage
2. GND - Ground
3. CE - Chip enable
4. RE - Read enable
5. WE - Write enable
6. A0-A18 - Address inputs
7. DQ0-DQ15 - Data inputs/outputs
8. R/B - Ready/busy status
9. CLE - Command latch enable
10. ALE - Address latch enable

Functional Features

• Page-level random access
• Block erase and program operations
• Error correction code (ECC) support
• Wear leveling algorithm for extended lifespan
• Bad block management

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage
• Fast read and write speeds enable quick data access
• Compact size facilitates integration into various devices
• Low power consumption prolongs battery life
• Error correction code ensures data integrity

Disadvantages

• Limited endurance compared to other types of memory
• Relatively higher cost per gigabyte compared to traditional hard drives

Working Principles

MT29F2G01AAAEDH4:E utilizes NAND flash technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on the floating gate. When reading data, the charge level is measured, and when writing data, the charge level is adjusted accordingly.

Detailed Application Field Plans

MT29F2G01AAAEDH4:E finds extensive use in the following applications:

1. Smartphones and tablets for storing operating systems, apps, and user data.
2. Digital cameras for storing high-resolution photos and videos.
3. Solid-state drives (SSDs) for fast and reliable data storage in computers and servers.
4. Industrial control systems for storing critical data and firmware.

Detailed and Complete Alternative Models

1. MT29F2G08ABAEAWP-IT: 8GB NAND Flash Memory with similar specifications but higher storage capacity.
2. MT29F2G16ABBEAH4-IT:E: 16GB NAND Flash Memory with increased storage capacity and improved performance.

(Note: The above alternative models are provided as examples and may not represent an exhaustive list of alternatives.)

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