MT29F2G01AAAEDH4-ITX:E

Product Overview

Category

MT29F2G01AAAEDH4-ITX:E belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F2G01AAAEDH4-ITX:E offers a storage capacity of 2GB, allowing users to store a large amount of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, enhancing overall device performance.
• Reliable and durable: This product is designed to withstand frequent data access and has a long lifespan, ensuring data integrity and reliability.
• Low power consumption: The MT29F2G01AAAEDH4-ITX:E is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.

Package and Quantity

The MT29F2G01AAAEDH4-ITX:E is available in a compact integrated circuit (IC) package. Each package contains a single unit of the NAND flash memory.

Specifications

• Manufacturer: Micron Technology Inc.
• Model: MT29F2G01AAAEDH4-ITX:E
• Storage Capacity: 2GB
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 100 Mbps (megabits per second)
• Erase/Program Cycles: 10,000 cycles

Detailed Pin Configuration

The MT29F2G01AAAEDH4-ITX:E follows a standard pin configuration for NAND flash memory. The pins are as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. CLE: Command Latch Enable
5. ALE: Address Latch Enable
6. RE: Read Enable
7. WE: Write Enable
8. R/B: Ready/Busy
9. DQ0-DQ7: Data Input/Output

Functional Features

• Page Program: Allows data to be written into the memory cells in page-level increments.
• Block Erase: Enables erasing of entire blocks of data, improving efficiency and flexibility in managing stored information.
• Random Access: Provides quick access to specific data within the memory, allowing for efficient retrieval and modification.
• Error Correction Code (ECC): Implements ECC algorithms to detect and correct errors that may occur during data transfer, ensuring data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enhances device performance.
• Reliable and durable design ensures data integrity.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited erase/program cycles may affect the lifespan of the memory.
• Higher cost compared to other types of memory.

Working Principles

The MT29F2G01AAAEDH4-ITX:E utilizes NAND flash memory technology. It consists of a grid of memory cells, each capable of storing multiple bits of data. These cells are organized into pages and blocks, which can be individually accessed and modified. When data is written, an electrical charge is applied to the memory cells, altering their state to represent the desired information. Reading data involves detecting the electrical state of the cells and converting it back into usable data.

Detailed Application Field Plans

The MT29F2G01AAAEDH4-ITX:E is widely used in various electronic devices, including: - Smartphones and tablets for data storage and app installation. - Digital cameras for storing photos and videos. - Solid-state drives (SSDs) for high-speed data storage in computers and servers. - Industrial control systems for reliable and durable data storage.

Alternative Models

1. MT29F2G01ABAEAWP-ITX:E
2. MT29F2G01ABBEAWP-ITX:E
3. MT29F2G01ABCEAWP-ITX:E

These alternative models offer similar specifications and functionality to the MT29F2G01AAAEDH4-ITX:E, providing users with options based on their specific requirements.

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