MT29F4G08ABBDAH4-ITX:D

Product Overview

Category

MT29F4G08ABBDAH4-ITX:D belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G08ABBDAH4-ITX:D offers a storage capacity of 4 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance, ensuring data integrity and durability.
• Low power consumption: The MT29F4G08ABBDAH4-ITX:D is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a small form factor package, making it suitable for integration into compact electronic devices.

Packaging/Quantity

The MT29F4G08ABBDAH4-ITX:D is typically packaged in surface mount technology (SMT) packages. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 4 GB
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A18 - Address inputs
4. CLE - Command latch enable
5. ALE - Address latch enable
6. CE - Chip enable
7. RE - Read enable
8. WE - Write enable
9. R/B - Ready/Busy status
10. DQ0-DQ7 - Data input/output

(Note: The pin configuration may vary depending on the specific package variant.)

Functional Features

• Page Program: Allows data to be written into the memory cells in page units.
• Block Erase: Enables erasing of multiple pages simultaneously, improving efficiency.
• Random Access: Provides quick access to any location within the memory array.
• Error Correction Code (ECC): Implements ECC algorithms to detect and correct errors during data read/write operations.
• Wear Leveling: Distributes write operations evenly across the memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity for storing large amounts of data.
• Fast data transfer rate for quick access to stored information.
• Reliable performance ensures data integrity and durability.
• Low power consumption for energy-efficient operation.
• Compact package allows integration into small electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles before it becomes unreliable.
• Susceptible to data loss if not properly managed or backed up.

Working Principles

The MT29F4G08ABBDAH4-ITX:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge applied to it. When data is written, the charge level of the memory cells is adjusted accordingly. During read operations, the charge levels are measured to retrieve the stored data.

Detailed Application Field Plans

The MT29F4G08ABBDAH4-ITX:D finds application in various electronic devices that require non-volatile data storage. Some common application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

1. MT29F4G08ABADAH4-ITX:D
2. MT29F4G08ABBDAH4-ITX:E
3. MT29F4G08ABBDAH4-ITX:F
4. MT29F4G08ABBDAH4-ITX:G

(Note: The alternative models listed above are similar in specifications and functionality to the MT29F4G08ABBDAH4-ITX:D, but may have slight variations or improvements.)

In conclusion, the MT29F4G08ABBDAH4-ITX:D is a NAND flash memory product with a high storage capacity, fast data transfer rate, and reliable performance. It is widely used in various electronic devices for data storage purposes. While it offers advantages such as compact size and low power consumption, it also has limitations like limited endurance. Nonetheless, its working principles and compatibility with