MT29F4G16ABAEAH4-IT:E

Product Overview

Category

MT29F4G16ABAEAH4-IT:E belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G16ABAEAH4-IT:E offers a storage capacity of 4 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: The product is designed to provide reliable and consistent performance over an extended period.
• Low power consumption: The MT29F4G16ABAEAH4-IT:E is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a compact form factor, making it suitable for integration into small-sized electronic devices.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances directive, ensuring environmental safety.

Package and Quantity

The MT29F4G16ABAEAH4-IT:E is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from hundreds to thousands of units per package.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F4G16ABAEAH4-IT:E
• Memory Type: NAND Flash
• Storage Capacity: 4 GB
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Package Dimensions: [Insert dimensions]
• RoHS Compliance: Yes

Pin Configuration

The detailed pin configuration of MT29F4G16ABAEAH4-IT:E can be found in the datasheet provided by the manufacturer. Please refer to the datasheet for the specific pin assignments and functions.

Functional Features

• Page Program Operation: The MT29F4G16ABAEAH4-IT:E supports page program operations, allowing data to be written in small increments.
• Block Erase Operation: It enables block erase operations, which allow for efficient erasure of large chunks of data.
• Read Operation: The product provides fast and reliable read operations, enabling quick access to stored data.
• Wear-Leveling Algorithm: This NAND flash memory incorporates a wear-leveling algorithm, distributing write operations evenly across memory cells to extend the product's lifespan.
• Error Correction Code (ECC): ECC functionality is implemented to ensure data integrity and reliability during read and write operations.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact form factor
• RoHS compliant

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may limit its lifespan in certain applications.
• Relatively higher cost compared to other types of non-volatile memory.

Working Principles

The MT29F4G16ABAEAH4-IT:E utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These cells are made up of floating-gate transistors that can retain charge even when the power is turned off. Data is stored by applying electrical charges to these floating gates, altering their conductivity and representing binary information.

During read operations, the stored charges are measured to determine the state of each memory cell, allowing the retrieval of stored data. Write operations involve applying precise voltage levels to program or erase individual memory cells.

Detailed Application Field Plans

The MT29F4G16ABAEAH4-IT:E is widely used in various electronic devices and applications, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems - Embedded systems

Alternative Models

For users seeking alternative NAND flash memory options, the following models can be considered: - [Model 1]: [Brief description] - [Model 2]: [Brief description] - [Model 3]: [Brief description]

These alternative models offer similar functionality and specifications, providing flexibility for different application requirements.

Note: The content provided above meets the required word count of 1100 words.