MT29F512G08CUCABH3-10RZ:A

Product Overview

Category: NAND Flash Memory
Use: Data storage in electronic devices
Characteristics: High capacity, fast read/write speeds, non-volatile memory
Package: BGA (Ball Grid Array)
Essence: Reliable and efficient data storage solution
Packaging/Quantity: Individually packaged, quantity varies based on customer requirements

Specifications

• Model: MT29F512G08CUCABH3-10RZ:A
• Capacity: 512GB
• Interface: Toggle NAND
• Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Read Speed: Up to 400MB/s
• Write Speed: Up to 200MB/s
• Endurance: 3,000 Program/Erase cycles
• Data Retention: Up to 10 years

Pin Configuration

The MT29F512G08CUCABH3-10RZ:A follows a standard pin configuration for BGA packages. The specific pin assignments are as follows:

1. VCC
2. VCCQ
3. GND
4. CE#
5. RE#
6. WE#
7. CLE
8. ALE
9. WP#
10. R/B#
11. DQ0
12. DQ1
13. DQ2
14. DQ3
15. DQ4
16. DQ5
17. DQ6
18. DQ7
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC

Functional Features

• High-speed data transfer for efficient read/write operations
• Toggle NAND interface for improved performance
• Reliable and durable with high endurance and data retention capabilities
• Low power consumption for energy-efficient operation
• Error correction and wear-leveling algorithms for enhanced reliability
• Advanced security features to protect stored data

Advantages and Disadvantages

Advantages: - Large storage capacity of 512GB - Fast read/write speeds for quick data access - Non-volatile memory retains data even without power - Suitable for a wide range of electronic devices - Robust design ensures durability and longevity

Disadvantages: - Higher cost compared to lower capacity NAND flash memory options - Limited compatibility with older devices that do not support the toggle NAND interface

Working Principles

The MT29F512G08CUCABH3-10RZ:A utilizes NAND flash memory technology to store and retrieve data. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density data storage.

During write operations, electrical charges are applied to the memory cells to store data. Reading involves detecting the presence or absence of charges in the cells. The toggle NAND interface enables fast data transfer between the memory and the device it is connected to.

Detailed Application Field Plans

The MT29F512G08CUCABH3-10RZ:A is widely used in various electronic devices that require high-capacity data storage. Some common application fields include:

1. Solid-State Drives (SSDs)
2. Smartphones and tablets
3. Digital cameras and camcorders
4. Gaming consoles
5. Automotive infotainment systems
6. Industrial control systems
7. Medical devices

Detailed Alternative Models

1. MT29F512G08CUCABH3-10RZ:B - Similar specifications, different package type (TSOP)
2. MT29F512G08CUCABH3-10RZ:C - Higher capacity (1TB), otherwise similar specifications
3. MT29F256G08CUCAAA3-10RZ:A - Lower capacity (256GB), otherwise similar specifications

These alternative models offer flexibility in terms of package type, capacity, and compatibility with different devices.

In conclusion, the MT29F512G08CUCABH3-10RZ:A is a high-capacity NAND flash memory designed for reliable data storage in various electronic devices. Its fast read/write speeds, non-volatile nature, and robust design make it an ideal choice for applications requiring large amounts of data storage.