MT29F64G08AEAAAC5-ITZ:A

Product Overview

Category

MT29F64G08AEAAAC5-ITZ:A belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F64G08AEAAAC5-ITZ:A offers a storage capacity of 64 gigabytes.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F64G08AEAAAC5-ITZ:A comes in a compact package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F64G08AEAAAC5-ITZ:A NAND flash memory is typically packaged in a small surface-mount package. The exact packaging and quantity may vary depending on the manufacturer and customer requirements.

Specifications

• Storage Capacity: 64 gigabytes
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. CLE: Command latch enable
5. ALE: Address latch enable
6. CE: Chip enable
7. RE: Read enable
8. WE: Write enable
9. R/B: Ready/busy status
10. DQ0-DQ7: Data input/output

(Note: The pin configuration may vary depending on the specific manufacturer and package type.)

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasing of data in block-sized units.
• Random Access: Provides random access to any memory location for read or write operations.
• Wear Leveling: Implements wear-leveling algorithms to distribute write operations evenly across memory blocks, extending the lifespan of the NAND flash memory.
• Error Correction Code (ECC): Incorporates ECC techniques to detect and correct errors during data transfer.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Compact size
• Low power consumption
• Reliable performance

Disadvantages

• Limited endurance: NAND flash memory has a limited number of program/erase cycles before it becomes unreliable.
• Susceptible to data loss: Power interruptions or improper handling can lead to data corruption or loss.

Working Principles

MT29F64G08AEAAAC5-ITZ:A utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge stored within it. When data is written, the charge is adjusted to represent the desired information. During read operations, the charge level is measured to retrieve the stored data.

Detailed Application Field Plans

MT29F64G08AEAAAC5-ITZ:A finds applications in various electronic devices that require high-capacity data storage. Some common application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

• MT29F64G08CBAAAWP:A
• MT29F64G08CBAAWP:A
• MT29F64G08CBAAWP-ITZ:A
• MT29F64G08CBAAWP-ITZ:C
• MT29F64G08CBAAWP-ITZ:D

(Note: The list of alternative models may vary depending on the manufacturer and availability in the market.)

This concludes the encyclopedia entry for MT29F64G08AEAAAC5-ITZ:A, providing an overview of its category, use, characteristics, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.