MT29F64G08AECABH1-10ITZ:A

Product Overview

Category: NAND Flash Memory
Use: Data storage in electronic devices
Characteristics: High capacity, non-volatile, fast read/write speeds
Package: Integrated circuit (IC)
Essence: Stores digital information in a compact and durable format
Packaging/Quantity: Typically sold individually or in bulk quantities

Specifications

• Model: MT29F64G08AECABH1-10ITZ:A
• Memory Capacity: 64 gigabits (8 gigabytes)
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Speed: Up to 100 MHz
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The MT29F64G08AECABH1-10ITZ:A has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. RE#
31. WE#
32. WP#
33. R/B#
34. CE#
35. BYTE#
36. NC
37. NC
38. NC
39. NC
40. GND
41. DQ0
42. DQ1
43. DQ2
44. DQ3
45. DQ4
46. DQ5
47. DQ6
48. DQ7

Functional Features

• High-speed data transfer
• Reliable and durable storage solution
• Low power consumption
• Error correction capabilities
• Block erase and program operations
• Wear-leveling algorithms for extended lifespan

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Non-volatile memory (retains data even when power is disconnected) - Compact size - Wide operating temperature range

Disadvantages: - Limited endurance (program/erase cycles) - Relatively high cost compared to other storage options - Requires specialized hardware and software support

Working Principles

The MT29F64G08AECABH1-10ITZ:A utilizes NAND flash memory technology to store digital information. It consists of a grid of memory cells, each capable of storing multiple bits of data. When writing data, the memory cells are programmed by applying electrical charges to specific locations within the grid. Reading data involves detecting the presence or absence of charges in the memory cells.

Detailed Application Field Plans

The MT29F64G08AECABH1-10ITZ:A is commonly used in various electronic devices that require high-capacity data storage, such as:

1. Solid-state drives (SSDs)
2. USB flash drives
3. Digital cameras
4. Mobile phones
5. Tablets
6. Gaming consoles
7. Industrial control systems

Alternative Models

• MT29F64G08CBABA
• MT29F64G08CECBBH3-10ITZ:A
• MT29F64G08FAAAAWP-IT:E
• MT29F64G08FBAAAFL-IT:E

These alternative models offer similar specifications and functionality to the MT29F64G08AECABH1-10ITZ:A, providing options for different application requirements.

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