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MT29F64G08AJABAWP:B TR

MT29F64G08AJABAWP:B TR

Product Overview

Category

MT29F64G08AJABAWP:B TR belongs to the category of NAND Flash Memory.

Use

It is commonly used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: MT29F64G08AJABAWP:B TR offers a storage capacity of 64 gigabits (8 gigabytes).
  • Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
  • Reliable performance: The NAND flash memory technology ensures durability and long-term reliability.
  • Low power consumption: It consumes minimal power, making it suitable for battery-powered devices.
  • Compact package: The product comes in a small form factor, enabling easy integration into different devices.

Package and Quantity

MT29F64G08AJABAWP:B TR is typically packaged in a surface-mount package (SMT) with a specific quantity per reel. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

  • Storage Capacity: 64 gigabits (8 gigabytes)
  • Interface: NAND Flash
  • Voltage Supply: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Data Transfer Rate: Up to XX MB/s (read), XX MB/s (write)
  • Erase Block Size: XX kilobytes
  • Endurance: XX Terabytes Written (TBW)
  • Data Retention: XX years

Detailed Pin Configuration

The pin configuration of MT29F64G08AJABAWP:B TR is as follows:

  1. VCC: Power supply voltage
  2. GND: Ground
  3. CE: Chip Enable
  4. RE: Read Enable
  5. WE: Write Enable
  6. A0-AXX: Address Inputs
  7. DQ0-DQXX: Data Input/Output
  8. R/B: Ready/Busy Status
  9. WP: Write Protect

Note: The exact pin configuration may vary depending on the manufacturer's specifications.

Functional Features

  • Page Program Operation: Allows data to be written in page-sized increments.
  • Block Erase Operation: Enables erasing of data in block-sized units.
  • Random Access: Provides random access to any memory location for efficient data retrieval.
  • Error Correction Code (ECC): Incorporates ECC algorithms to ensure data integrity and reliability.
  • Wear Leveling: Distributes write operations evenly across memory blocks, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

  • High storage capacity allows for ample data storage.
  • Fast data transfer rate enables quick read and write operations.
  • Low power consumption prolongs battery life in portable devices.
  • Compact package facilitates easy integration into various electronic devices.
  • Reliable performance ensures data integrity and long-term usability.

Disadvantages

  • Limited endurance: Frequent write operations may reduce the lifespan of the NAND flash memory.
  • Susceptible to physical damage: NAND flash memory can be affected by electrical shocks or extreme temperatures.

Working Principles

MT29F64G08AJABAWP:B TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell consists of a floating-gate transistor that can store electrical charges representing binary data (0s and 1s). By applying appropriate voltages to the control gates and bit lines, data can be written, read, or erased from the memory cells.

During a write operation, the desired data is programmed into the memory cells by trapping charges in the floating gates. Reading data involves sensing the electrical charges stored in the memory cells, while erasing data clears the charges from the cells.

Detailed Application Field Plans

MT29F64G08AJABAWP:B TR finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems - Embedded systems

Alternative Models

Several alternative models with similar specifications and features to MT29F64G08AJABAWP:B TR are available in the market. Some notable alternatives include: - Model 1: [Specifications] - Model 2: [Specifications] - Model 3: [Specifications]

These alternative models provide users with options based on their specific requirements and compatibility with different devices.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F64G08AJABAWP:B TR v technických řešeních

1. What is the MT29F64G08AJABAWP:B TR?

The MT29F64G08AJABAWP:B TR is a specific model of NAND flash memory chip manufactured by Micron Technology.

2. What is the storage capacity of the MT29F64G08AJABAWP:B TR?

The MT29F64G08AJABAWP:B TR has a storage capacity of 64 gigabits (8 gigabytes).

3. What is the interface used by the MT29F64G08AJABAWP:B TR?

The MT29F64G08AJABAWP:B TR uses a standard NAND flash interface.

4. What is the operating voltage range of the MT29F64G08AJABAWP:B TR?

The MT29F64G08AJABAWP:B TR operates within a voltage range of 2.7V to 3.6V.

5. What is the maximum data transfer rate of the MT29F64G08AJABAWP:B TR?

The MT29F64G08AJABAWP:B TR supports a maximum data transfer rate of up to 200 megabytes per second.

6. Is the MT29F64G08AJABAWP:B TR compatible with various operating systems?

Yes, the MT29F64G08AJABAWP:B TR is compatible with various operating systems, including Windows, Linux, and macOS.

7. Can the MT29F64G08AJABAWP:B TR be used in industrial applications?

Yes, the MT29F64G08AJABAWP:B TR is designed for industrial applications and can withstand harsh environmental conditions.

8. Does the MT29F64G08AJABAWP:B TR support wear-leveling algorithms?

Yes, the MT29F64G08AJABAWP:B TR supports wear-leveling algorithms to ensure even distribution of data writes across the memory cells.

9. What is the MTBF (Mean Time Between Failures) of the MT29F64G08AJABAWP:B TR?

The MTBF of the MT29F64G08AJABAWP:B TR is typically specified by the manufacturer and can vary depending on the specific application and usage conditions.

10. Can the MT29F64G08AJABAWP:B TR be used in automotive applications?

Yes, the MT29F64G08AJABAWP:B TR is suitable for automotive applications and meets the required standards for automotive electronics.