MT29F64G08CBABAWP-IT:B TR

Product Overview

Category

The MT29F64G08CBABAWP-IT:B TR belongs to the category of NAND flash memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F64G08CBABAWP-IT:B TR offers a storage capacity of 64 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F64G08CBABAWP-IT:B TR comes in a small form factor, enabling its integration into compact electronic devices.

Package and Quantity

The MT29F64G08CBABAWP-IT:B TR is packaged in a surface-mount technology (SMT) package. It is typically sold in reels containing a specific quantity, usually ranging from hundreds to thousands of units per reel.

Specifications

• Memory Type: NAND Flash
• Capacity: 64 GB
• Interface: Serial Peripheral Interface (SPI)
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F64G08CBABAWP-IT:B TR has a standard pin configuration with the following pins:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. CLE: Command Latch Enable
5. ALE: Address Latch Enable
6. RE: Read Enable
7. WE: Write Enable
8. R/B: Ready/Busy status
9. DQ0-DQ7: Data Input/Output

Functional Features

• Block Erase: The MT29F64G08CBABAWP-IT:B TR allows for erasing data in large blocks, enhancing efficiency.
• Page Program: It supports fast programming of individual memory pages, enabling quick data storage.
• Error Correction Code (ECC): This NAND flash memory incorporates ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: It employs wear-leveling techniques to distribute write operations evenly across memory cells, prolonging the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate facilitates quick access to stored information.
• Low power consumption makes it suitable for battery-powered devices.
• Reliable performance ensures consistent operation over time.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

The MT29F64G08CBABAWP-IT:B TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. To read or write data, specific voltage levels are applied to the appropriate pins, allowing for the manipulation of the stored charges.

Detailed Application Field Plans

The MT29F64G08CBABAWP-IT:B TR finds application in various electronic devices, including: 1. Smartphones and tablets for data storage and app execution. 2. Digital cameras for storing high-resolution photos and videos. 3. Solid-state drives (SSDs) for fast and reliable data storage in computers and servers. 4. Industrial control systems for storing critical data and firmware.

Detailed and Complete Alternative Models

1. MT29F64G08CBABAWP-IT: Similar to the mentioned model but without the "B TR" suffix.
2. MT29F64G08CBABAWP-IT:C TR: A variant with additional features or improved specifications.
3. MT29F64G08CBABAWP-IT:D TR: Another alternative model with enhanced performance characteristics.

(Note: The above alternative models are hypothetical and may not represent actual products.)

This entry provides a comprehensive overview of the MT29F64G08CBABAWP-IT:B TR NAND flash memory, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.