MT41K2G4SN-125:A

Product Overview

Category

MT41K2G4SN-125:A belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in computer systems and electronic devices for storing and accessing data quickly.

Characteristics

• High-speed data access
• Volatile memory
• Large storage capacity
• Compact size
• Low power consumption

Package

MT41K2G4SN-125:A is packaged as a small module with pins for easy integration into circuit boards.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

MT41K2G4SN-125:A is typically packaged in anti-static bags or trays. The quantity may vary depending on the manufacturer's specifications.

Specifications

• Part Number: MT41K2G4SN-125:A
• Memory Type: DDR3 SDRAM
• Capacity: 2GB
• Speed: 125 MHz
• Voltage: 1.5V
• Organization: 256M x 8
• Interface: 240-pin DIMM

Detailed Pin Configuration

The pin configuration of MT41K2G4SN-125:A is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. BA0
39. BA1
40. RAS#
41. CAS#
42. WE#
43. CS#
44. DM0
45. DM1
46. VSS
47. DQS0#
48. DQS0
49. VDD
50. DQS1#
51. DQS1
52. VSS
53. DQ16
54. DQ17
55. DQ18
56. DQ19
57. DQ20
58. DQ21
59. DQ22
60. DQ23
61. VSS
62. DQ24
63. DQ25
64. DQ26
65. DQ27
66. DQ28
67. DQ29
68. DQ30
69. DQ31
70. VSS
71. A16
72. A17
73. A18
74. A19
75. A20
76. A21
77. A22
78. A23
79. VSS
80. NC

Functional Features

• High-speed data transfer rate
• Support for advanced memory technologies
• Error correction capabilities
• Low latency access
• Compatibility with various computer systems and devices

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Compact size for easy integration
• Low power consumption

Disadvantages

• Volatile memory (data is lost when power is turned off)
• Relatively higher cost compared to other memory technologies

Working Principles

MT41K2G4SN-125:A operates based on the principles of DDR3 SDRAM technology. It stores data in a matrix of capacitors, which are charged or discharged to represent binary values. The data is accessed by sending electrical signals through the pins, allowing for rapid reading and writing operations.

Detailed Application Field Plans

MT41K2G4SN-125:A finds applications in various electronic devices and systems, including: - Personal computers - Laptops - Servers - Gaming consoles - Mobile devices - Networking equipment

Detailed and Complete Alternative Models

Some alternative models to MT41K2G4SN-125:A include: - MT41K2G8SN-125:A - MT41K4G4SN-125:A - MT41K4G8SN-125:A - MT41K8G4SN-125:A - MT41K16