Micron Technology Inc.
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MT46V128M4BN-75:D

MT46V128M4BN-75:D

Product Overview

Category

The MT46V128M4BN-75:D belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in computer systems, mobile devices, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

  • High-density storage capacity
  • Fast data access and transfer rates
  • Low power consumption
  • Compact package size
  • Wide operating temperature range

Package

The MT46V128M4BN-75:D is available in a small outline dual in-line memory module (SODIMM) package. This compact form factor makes it suitable for use in space-constrained devices.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and efficiently, enabling smooth operation of various electronic devices.

Packaging/Quantity

The MT46V128M4BN-75:D is typically packaged in trays or reels, with each containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

  • Memory Type: DDR SDRAM
  • Capacity: 128 Megabytes (MB)
  • Organization: 4 Megabits x 4 banks x 4 bits
  • Speed Grade: 75 (operating frequency of 75 MHz)
  • Voltage: 2.5 Volts
  • Interface: Parallel
  • Pin Count: 66 pins

Detailed Pin Configuration

The pin configuration of the MT46V128M4BN-75:D is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. A8
  29. A9
  30. A10
  31. A11
  32. A12
  33. A13
  34. A14
  35. A15
  36. A16
  37. A17
  38. A18
  39. A19
  40. A20
  41. A21
  42. A22
  43. A23
  44. /CAS
  45. /RAS
  46. /WE
  47. /CS0
  48. /CS1
  49. /CS2
  50. /CS3
  51. /CKE
  52. /CLK
  53. /DQM0
  54. /DQM1
  55. /DQM2
  56. /DQM3
  57. VDD
  58. VDD
  59. VSS
  60. VSS
  61. VSS
  62. VSS
  63. VSS
  64. VSS
  65. VSS
  66. VSS

Functional Features

  • Random access to stored data
  • High-speed read and write operations
  • Auto-refresh capability for maintaining data integrity
  • Burst mode operation for efficient data transfer
  • Low power self-refresh mode for reduced power consumption during idle periods

Advantages and Disadvantages

Advantages

  • High-density storage capacity allows for storing large amounts of data
  • Fast data access and transfer rates enhance overall system performance
  • Low power consumption helps prolong battery life in mobile devices
  • Compact package size enables usage in space-constrained devices

Disadvantages

  • Relatively higher cost compared to other types of memory
  • Requires regular refresh cycles to maintain data integrity
  • Sensitive to electrical noise and voltage fluctuations

Working Principles

The MT46V128M4BN-75:D operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which must be periodically refreshed to maintain the stored information. When a read or write operation is initiated, the memory controller sends the appropriate signals to access the desired memory location.

Detailed Application Field Plans

The MT46V128M4BN-75:D can be used in various applications, including: 1. Personal computers and laptops 2. Mobile phones and tablets 3. Gaming consoles 4. Networking equipment 5. Industrial automation systems 6. Medical devices 7. Automotive electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the MT46V128M4BN-75

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT46V128M4BN-75:D v technických řešeních

Sure! Here are 10 common questions and answers related to the application of MT46V128M4BN-75:D in technical solutions:

  1. Question: What is the capacity of the MT46V128M4BN-75:D memory module?
    Answer: The MT46V128M4BN-75:D has a capacity of 128 megabits (16 megabytes).

  2. Question: What is the operating voltage range for this memory module?
    Answer: The operating voltage range for the MT46V128M4BN-75:D is 2.5V to 3.3V.

  3. Question: What is the maximum clock frequency supported by this memory module?
    Answer: The MT46V128M4BN-75:D supports a maximum clock frequency of 133 MHz.

  4. Question: Can this memory module be used in both commercial and industrial applications?
    Answer: Yes, the MT46V128M4BN-75:D is suitable for both commercial and industrial applications.

  5. Question: Does this memory module support synchronous operation?
    Answer: Yes, the MT46V128M4BN-75:D supports synchronous operation.

  6. Question: What is the package type for this memory module?
    Answer: The MT46V128M4BN-75:D comes in a 66-ball FBGA (Fine-Pitch Ball Grid Array) package.

  7. Question: Is this memory module compatible with DDR2 memory controllers?
    Answer: Yes, the MT46V128M4BN-75:D is compatible with DDR2 memory controllers.

  8. Question: What is the CAS latency of this memory module?
    Answer: The CAS latency of the MT46V128M4BN-75:D is 3.

  9. Question: Can this memory module be used in automotive applications?
    Answer: Yes, the MT46V128M4BN-75:D is suitable for automotive applications.

  10. Question: Does this memory module have any built-in error correction capabilities?
    Answer: No, the MT46V128M4BN-75:D does not have built-in error correction capabilities.