MT46V32M8P-6TL:GTR

Product Overview

Category

MT46V32M8P-6TL:GTR belongs to the category of dynamic random-access memory (DRAM) chips.

Use

This product is primarily used in computer systems, servers, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High-density storage capacity
• Fast data access and transfer rates
• Low power consumption
• Compact package size
• Wide operating temperature range

Package

The MT46V32M8P-6TL:GTR chip is typically packaged in a small outline, thin profile (TSOP) package. This package offers good thermal performance and ease of integration into various electronic devices.

Essence

The essence of MT46V32M8P-6TL:GTR lies in its ability to provide reliable and efficient data storage and retrieval capabilities for electronic devices.

Packaging/Quantity

These chips are usually supplied in reels or trays, with each reel or tray containing a specific quantity of MT46V32M8P-6TL:GTR chips. The exact quantity may vary depending on the supplier and customer requirements.

Specifications

• Memory Type: DDR SDRAM
• Organization: 32M words x 8 bits
• Operating Voltage: 2.5V ± 0.2V
• Clock Frequency: 166 MHz
• Access Time: 6 ns
• Burst Length: 4 or 8
• Refresh Rate: 7.8 µs (64 ms)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT46V32M8P-6TL:GTR chip has a total of 66 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. A16
37. A17
38. A18
39. A19
40. A20
41. A21
42. A22
43. A23
44. A24
45. A25
46. A26
47. A27
48. A28
49. A29
50. A30
51. A31
52. BA0
53. BA1
54. RAS#
55. CAS#
56. WE#
57. CKE
58. CS#
59. DM0
60. DM1
61. VSS
62. CLK
63. VDD
64. VDD
65. VSS
66. VSS

Functional Features

• High-speed data access and transfer capabilities
• Support for burst read and write operations
• On-die termination (ODT) for improved signal integrity
• Auto-refresh and self-refresh modes for power-saving operation
• Error correction code (ECC) support for data integrity

Advantages and Disadvantages

Advantages

• High-density storage capacity allows for efficient data storage in a compact form factor.
• Fast data access and transfer rates enable quick processing of information.
• Low power consumption helps to conserve energy and extend battery life in portable devices.
• Wide operating temperature range ensures reliable performance in various environmental conditions.

Disadvantages

• The high-speed nature of DRAM makes it more susceptible to data loss in case of power failure or system crashes.
• The need for periodic refresh cycles can introduce latency in data access.

Working Principles

MT46V32M8P-6TL:GTR operates based on the principles of dynamic random-access memory. It stores data in capacitors within each memory cell, which are periodically refreshed to maintain the stored information. When a read or write operation is initiated, the memory controller sends the appropriate signals to access the desired memory location.

Detailed Application Field Plans

MT46V32M8P-6TL:GTR finds applications in a wide range of electronic devices, including: - Personal computers - L