MT46V64M8FN-6 IT:F TR

Product Overview

Category

The MT46V64M8FN-6 IT:F TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports fast read and write operations

Package

The MT46V64M8FN-6 IT:F TR is available in a compact and standardized package suitable for surface mount technology (SMT). The package ensures easy integration into various electronic devices.

Essence

The essence of this product lies in its ability to provide high-speed and reliable data storage and retrieval functions, essential for efficient operation of electronic devices.

Packaging/Quantity

The MT46V64M8FN-6 IT:F TR is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in quantities of 100 or more.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 64 Megabit x 8
• Operating Voltage: 3.3V
• Speed Grade: -6
• Package Type: TSOP (Thin Small Outline Package)
• Temperature Range: Industrial (-40°C to +85°C)
• RoHS Compliance: Yes

Detailed Pin Configuration

The MT46V64M8FN-6 IT:F TR has a total of 54 pins, which are arranged as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. A16
37. A17
38. A18
39. A19
40. A20
41. A21
42. A22
43. A23
44. /CAS
45. /RAS
46. /WE
47. /CS
48. /OE
49. NC
50. VSS
51. VSS
52. VSS
53. VSS
54. VDD

Functional Features

• High-speed data access and transfer
• Low power consumption
• Self-refresh capability for power-saving mode
• Internal pipelined architecture for efficient operation
• On-chip error correction code (ECC) for improved reliability

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Large storage capacity
• Low power consumption
• Reliable performance with ECC support
• Suitable for various electronic devices

Disadvantages

• Volatile memory requires constant power supply
• Relatively higher cost compared to other memory technologies
• Limited lifespan due to the finite number of read/write cycles

Working Principles

The MT46V64M8FN-6 IT:F TR operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which are periodically refreshed to maintain the stored information. When data needs to be accessed or written, the appropriate row and column addresses are provided, allowing the memory controller to read or modify the data.

Detailed Application Field Plans

The MT46V64M8FN-6 IT:F TR is widely used in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

1. MT46V32M16P-5B: 32 Megabit x 16, -5B Speed Grade, TSOP Package
2. MT47H128M16RT-25E: 128 Megabit x 16, -25E Speed Grade, BGA Package
3. MT41K256M16TW-107: 256 Megabit x 16, DDR3L SDRAM, -107 Speed Grade,