MT47H128M8BT-37E L:A

Overview

Product Category: Memory Module
Use: Data storage and retrieval
Characteristics: High capacity, fast data transfer rate
Package: Integrated circuit module
Essence: Non-volatile memory device
Packaging/Quantity: Single unit

Specifications

• Model: MT47H128M8BT-37E L:A
• Capacity: 128 megabytes (MB)
• Type: DDR3 SDRAM
• Speed: 1333 megahertz (MHz)
• Voltage: 1.5 volts (V)
• Organization: 128M words x 8 bits
• Package Type: 78-ball FBGA
• Operating Temperature: -40°C to +85°C

Pin Configuration

The MT47H128M8BT-37E L:A memory module has a total of 78 pins. The pin configuration is as follows:

1. VSS
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VDD
11. VDDSPD
12. VSS
13. A9
14. A11
15. A13
16. A15
17. A17
18. A19
19. A21
20. A23
21. VSS
22. A25
23. A27
24. A29
25. A31
26. A33
27. A35
28. A37
29. VSS
30. A39
31. A41
32. A43
33. A45
34. A47
35. A49
36. A51
37. VSS
38. A53
39. A55
40. A57
41. A59
42. A61
43. A63
44. A65
45. VSS
46. A67
47. A69
48. A71
49. A73
50. A75
51. A77
52. A79
53. VSS
54. A81
55. A83
56. A85
57. A87
58. A89
59. A91
60. A93
61. VSS
62. A95
63. A97
64. A99
65. BA0
66. BA1
67. RAS#
68. CAS#
69. WE#
70. VSS
71. CK
72. CK#
73. CKE
74. CS#
75. DQS0
76. DQS1
77. DM0
78. DM1

Functional Features

• High-speed data transfer rate for efficient data processing.
• Non-volatile memory ensures data retention even when power is lost.
• Low voltage operation for reduced power consumption.
• Error correction capabilities for enhanced data integrity.

Advantages and Disadvantages

Advantages: - Large storage capacity allows for storing a significant amount of data. - Fast data transfer rate enables quick access to stored information. - Reliable performance with error correction features. - Low power consumption for energy efficiency.

Disadvantages: - Limited compatibility with older systems that do not support DDR3 SDRAM. - Relatively higher cost compared to lower capacity memory modules. - Requires proper handling and installation to prevent damage.

Working Principles

The MT47H128M8BT-37E L:A memory module operates based on the principles of DDR3 SDRAM technology. It stores data in an array of memory cells, organized in a grid-like structure. The module receives data signals from the system and processes them using internal circuitry to read or write data to the memory cells. The high-speed clock signals synchronize the data transfer between the memory module and the system.

Detailed Application Field Plans

The MT47H128M8BT-37E L:A memory module is commonly used in various applications that require high-capacity and fast data storage. Some of the typical application fields include:

1. Personal Computers (PCs)
2. Workstations
3. Servers
4. Networking Equipment
5. Embedded Systems
6. Data Centers
7. Gaming Consoles
8. Industrial Automation

Alternative Models

Below are some alternative models that offer similar functionality and can be considered as alternatives to the MT47H128M8BT-37E L:A memory module:

1. MT47H64M16HR-25E IT:H
2. MT47H256M8EB-25E:B
3. MT47H512M8HQ-25E:C
4. MT47