MT47H256M4BT-5E:A

Product Overview

Category

MT47H256M4BT-5E:A belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size

Package

MT47H256M4BT-5E:A is available in a small form factor package, which allows for easy integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

MT47H256M4BT-5E:A is typically packaged in trays or reels, with each package containing a specific quantity of memory chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 256 Megabits (32 Megabytes)
• Speed Grade: 5E
• Organization: 4 banks x 4,194,304 words x 4 bits
• Supply Voltage: 1.8V
• Operating Temperature Range: -40°C to +85°C
• Interface: Double Data Rate (DDR) SDRAM

Detailed Pin Configuration

The pin configuration of MT47H256M4BT-5E:A is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. VDD
20. VSS
21. A0
22. A1
23. A2
24. A3
25. A4
26. A5
27. A6
28. A7
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. BA0
38. BA1
39. RAS#
40. CAS#
41. WE#
42. CK
43. CKE
44. CS#
45. DM0
46. DM1
47. VSS
48. VDD

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexible performance optimization

Advantages and Disadvantages

Advantages

• Fast data access speed enhances overall system performance.
• Large storage capacity allows for the storage of a vast amount of data.
• Low power consumption helps to prolong battery life in portable devices.
• Compact package size enables easy integration into various electronic devices.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance, as repeated read/write cycles may degrade performance over time.
• Sensitivity to electrical noise and voltage fluctuations.

Working Principles

MT47H256M4BT-5E:A operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores digital information in an array of capacitors, with each capacitor representing a single bit of data. The data is accessed and manipulated by sending commands and addresses through the memory interface.

Detailed Application Field Plans

MT47H256M4BT-5E:A finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Smartphones and tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT47H256M4BT-5E:A include: - MT47H128M8BT-5E:A - MT47H512M16BT-5E:A - MT47H1024M32BT-5E:A

These alternative models differ in terms of capacity and organization but share similar characteristics and specifications.

In conclusion, MT47H256M4BT-5E:A is a high-performance SDRAM memory chip with a compact package size. It offers fast data access, large storage capacity, and low power consumption. While it has advantages such as improved system performance and power efficiency, it also has limitations such as higher cost and sensitivity to electrical noise. This memory chip finds applications