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MT47H512M4THN-25E:M TR

MT47H512M4THN-25E:M TR

Product Overview

Category

The MT47H512M4THN-25E:M TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

  • High-speed performance
  • Large storage capacity
  • Low power consumption
  • Compact size

Package

The MT47H512M4THN-25E:M TR is available in a small form factor package, making it suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

The MT47H512M4THN-25E:M TR is typically packaged in trays or reels, with each package containing a specific quantity of memory chips.

Specifications

  • Model: MT47H512M4THN-25E:M TR
  • Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
  • Capacity: 512 Megabits (64 Megabytes)
  • Speed: 25E (DDR3-1600)
  • Operating Voltage: 1.5V
  • Organization: 512M words x 4 bits x 8 banks
  • Interface: Double Data Rate (DDR) interface

Detailed Pin Configuration

The MT47H512M4THN-25E:M TR has a specific pin configuration that enables its proper functioning within a system. The detailed pin configuration is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. VSS
  29. A8
  30. A9
  31. A10
  32. A11
  33. A12
  34. A13
  35. A14
  36. A15
  37. VSS
  38. BA0
  39. BA1
  40. RAS#
  41. CAS#
  42. WE#
  43. CS#
  44. DM0
  45. DM1
  46. VSS
  47. CLK
  48. CKE
  49. ODT
  50. RESET#
  51. VDD
  52. VDD
  53. VSS
  54. VSS

Functional Features

The MT47H512M4THN-25E:M TR offers the following functional features:

  • High-speed data transfer rate
  • Burst mode operation for efficient data access
  • Auto-refresh and self-refresh modes for power-saving
  • On-die termination (ODT) for improved signal integrity
  • Error correction code (ECC) support for data reliability

Advantages and Disadvantages

Advantages

  • Fast data transfer speed enhances overall system performance.
  • Large storage capacity allows for extensive data storage.
  • Low power consumption prolongs battery life in portable devices.
  • Compact size enables integration into space-constrained devices.

Disadvantages

  • Relatively higher cost compared to other memory technologies.
  • Limited scalability beyond a certain capacity.
  • Susceptible to data loss in case of power failure without proper backup measures.

Working Principles

The MT47H512M4THN-25E:M TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It utilizes a clock signal to synchronize data transfers and employs a row-column addressing scheme for efficient data retrieval.

Detailed Application Field Plans

The MT47H512M4THN-25E:M TR finds extensive application in various electronic devices, including but not limited to:

  1. Personal computers
  2. Laptops and notebooks
  3. Servers and data centers
  4. Mobile phones and tablets
  5. Gaming consoles
  6. Networking equipment

Detailed and Complete Alternative Models

  1. MT47H256M8EB-25E:E TR
  2. MT47H128M16RT-25E:B TR
  3. MT47H64M16HR-25E:A TR
  4. MT47H32M16BN-25E:C TR
  5. MT47H16M16BG-25E:A TR

These alternative models offer similar functionality and specifications as the MT47H

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT47H512M4THN-25E:M TR v technických řešeních

1. What is the MT47H512M4THN-25E:M TR?

The MT47H512M4THN-25E:M TR is a specific model of DDR3 SDRAM (Synchronous Dynamic Random Access Memory) module manufactured by Micron Technology.

2. What is the capacity of the MT47H512M4THN-25E:M TR?

The MT47H512M4THN-25E:M TR has a capacity of 512 megabytes (MB).

3. What is the speed rating of the MT47H512M4THN-25E:M TR?

The MT47H512M4THN-25E:M TR has a speed rating of 25E, which corresponds to a clock frequency of 400 MHz.

4. What is the voltage requirement for the MT47H512M4THN-25E:M TR?

The MT47H512M4THN-25E:M TR operates at a voltage of 1.5 volts.

5. What is the form factor of the MT47H512M4THN-25E:M TR?

The MT47H512M4THN-25E:M TR follows the Small Outline Dual In-Line Memory Module (SO-DIMM) form factor.

6. Is the MT47H512M4THN-25E:M TR compatible with my device?

To determine compatibility, you need to check if your device supports DDR3 SDRAM modules and if it can accommodate SO-DIMM form factor. Consult your device's specifications or consult with the manufacturer for compatibility confirmation.

7. Can I use multiple MT47H512M4THN-25E:M TR modules together?

Yes, you can use multiple MT47H512M4THN-25E:M TR modules together, as long as your device supports multiple memory slots and the total capacity does not exceed the device's maximum supported memory.

8. What are the typical applications of the MT47H512M4THN-25E:M TR?

The MT47H512M4THN-25E:M TR is commonly used in various technical solutions such as computer systems, servers, networking equipment, industrial automation, and embedded systems.

9. Can I upgrade my existing memory with the MT47H512M4THN-25E:M TR?

If your device supports DDR3 SDRAM modules and has available memory slots, you can potentially upgrade your existing memory by replacing or adding MT47H512M4THN-25E:M TR modules. However, it is recommended to consult your device's specifications or manufacturer for compatibility and upgrade options.

10. Where can I purchase the MT47H512M4THN-25E:M TR?

You can purchase the MT47H512M4THN-25E:M TR from authorized distributors, online retailers, or directly from Micron Technology's official website.