MT52L256M64D2LZ-107 WT:B TR

Basic Information Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - High capacity - Low power consumption - Fast data transfer rate - Compact size

Package: BGA (Ball Grid Array)

Essence: This IC is a high-capacity memory device that offers fast and efficient data storage and retrieval capabilities.

Packaging/Quantity: The MT52L256M64D2LZ-107 WT:B TR is typically sold in reels or trays, with a quantity of 2500 units per reel.

Specifications

• Memory Type: SDRAM (Synchronous Dynamic Random Access Memory)
• Capacity: 256 Megabits (32 Megabytes)
• Organization: 64M words x 4 banks x 16 bits
• Operating Voltage: 1.7V - 1.95V
• Clock Frequency: 1066 MHz
• Interface: Double Data Rate (DDR2)
• Package Dimensions: 8mm x 10mm

Detailed Pin Configuration

The MT52L256M64D2LZ-107 WT:B TR has a total of 96 pins arranged in a specific configuration. Please refer to the datasheet for the detailed pinout diagram.

Functional Features

• High-speed data transfer: The DDR2 interface allows for fast and efficient data transfer between the memory device and the host system.
• Low power consumption: The IC is designed to operate at low voltage levels, reducing power consumption and extending battery life in portable devices.
• High capacity: With a capacity of 256 Megabits, this memory device can store a large amount of data.
• Reliable performance: The SDRAM technology ensures reliable and stable performance even under demanding conditions.

Advantages and Disadvantages

Advantages: - High capacity for storing large amounts of data - Fast data transfer rate - Low power consumption - Compact size

Disadvantages: - Limited compatibility with older systems that do not support DDR2 interface - Relatively higher cost compared to lower-capacity memory devices

Working Principles

The MT52L256M64D2LZ-107 WT:B TR operates based on the principles of SDRAM technology. It stores data in a matrix of capacitors, which are organized into banks and accessed through a complex addressing scheme. The DDR2 interface allows for high-speed data transfer by utilizing both the rising and falling edges of the clock signal.

Detailed Application Field Plans

The MT52L256M64D2LZ-107 WT:B TR is widely used in various electronic devices and systems that require high-capacity and fast memory storage. Some common application fields include:

1. Personal Computers (PCs) and Laptops: Used as main memory for storing operating system data and running applications.
2. Servers and Data Centers: Provides high-speed memory for handling large amounts of data and processing requests.
3. Networking Equipment: Used for buffering and caching data in routers, switches, and other network devices.
4. Consumer Electronics: Found in digital cameras, gaming consoles, set-top boxes, and other multimedia devices for storing media files and running applications.
5. Automotive Systems: Used in infotainment systems, navigation systems, and advanced driver-assistance systems (ADAS) for data storage and processing.

Detailed and Complete Alternative Models

1. MT52L256M64D2LZ-107 WT:A TR
2. MT52L256M64D2LZ-107 WT:C TR
3. MT52L256M64D2LZ-107 WT:D TR
4. MT52L256M64D2LZ-107 WT:E TR

These alternative models offer similar specifications and functionality to the MT52L256M64D2LZ-107 WT:B TR, providing options for different sourcing or compatibility requirements.

In conclusion, the MT52L256M64D2LZ-107 WT:B TR is a high-capacity memory device with fast data transfer capabilities. It is widely used in various electronic devices and systems that require reliable and efficient memory storage.