MT53B256M32D1GZ-062 WT ES:B TR

Product Overview

Category

The MT53B256M32D1GZ-062 WT ES:B TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High storage capacity: The MT53B256M32D1GZ-062 WT ES:B TR offers a storage capacity of 256 megabits (32 megabytes).
• Fast data transfer rate: It supports high-speed data transfer, allowing for quick access to stored information.
• Low power consumption: This product is designed to operate efficiently with minimal power consumption.
• Compact package: The MT53B256M32D1GZ-062 WT ES:B TR comes in a compact package, making it suitable for integration into various electronic devices.
• Reliable performance: It offers reliable performance, ensuring data integrity and longevity.

Package and Quantity

The MT53B256M32D1GZ-062 WT ES:B TR is packaged in a small form factor, typically in a surface-mount package. The quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Model: MT53B256M32D1GZ-062 WT ES:B TR
• Storage Capacity: 256 megabits (32 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 3.3V
• Data Transfer Rate: Up to 100 MHz
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT53B256M32D1GZ-062 WT ES:B TR has a specific pin configuration that enables its proper functioning. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. CS: Chip select for SPI communication
4. SCK: Serial clock for SPI communication
5. SI: Serial data input for SPI communication
6. SO: Serial data output for SPI communication

Functional Features

• High-speed data transfer: The MT53B256M32D1GZ-062 WT ES:B TR supports fast data transfer, allowing for efficient read and write operations.
• Reliable data storage: It ensures reliable data storage with built-in error correction mechanisms.
• Low power consumption: This product is designed to minimize power consumption, making it suitable for battery-powered devices.
• Compact form factor: The small package size enables easy integration into space-constrained electronic devices.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Low power consumption
• Compact package size
• Reliable performance

Disadvantages

• Limited compatibility with certain device architectures
• Relatively higher cost compared to lower-capacity memory options

Working Principles

The MT53B256M32D1GZ-062 WT ES:B TR operates based on the principles of flash memory technology. It utilizes a combination of floating-gate transistors and charge storage to store and retrieve digital information. The data is organized into individual memory cells, which can be electrically programmed and erased as needed.

Detailed Application Field Plans

The MT53B256M32D1GZ-062 WT ES:B TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Smartphones - Tablets - Digital cameras - Gaming consoles

Its high storage capacity and fast data transfer rate make it suitable for storing operating systems, applications, multimedia content, and other data-intensive files.

Detailed and Complete Alternative Models

• MT25QL256ABA1EW7-0SIT
• IS43TR16256AL-125KBLI
• W25Q256JVSIQ
• S34ML02G200TFI000

These alternative models offer similar functionality and specifications to the MT53B256M32D1GZ-062 WT ES:B TR, providing options for different design requirements and compatibility considerations.

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