MT53B384M64D4TX-053 WT ES:B TR

Product Overview

Category: Memory Module
Use: Data storage and retrieval
Characteristics: High capacity, fast data transfer rate
Package: Integrated circuit module
Essence: Non-volatile memory storage
Packaging/Quantity: Single unit

Specifications

• Model: MT53B384M64D4TX-053 WT ES:B TR
• Capacity: 384 megabytes (MB)
• Type: DDR4 SDRAM
• Speed: 2400 megahertz (MHz)
• Voltage: 1.2 volts (V)
• Form Factor: DIMM 288-pin
• Error Correction Code (ECC): Yes
• Operating Temperature Range: -40°C to +85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The MT53B384M64D4TX-053 WT ES:B TR memory module has a total of 288 pins arranged in a specific configuration. The pinout diagram is as follows:

[Pin Diagram]

Functional Features

• High-speed data transfer for efficient performance
• Non-volatile memory ensures data retention even during power loss
• Error Correction Code (ECC) for enhanced data integrity
• Low voltage operation for energy efficiency
• RoHS compliance for environmental friendliness

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast data transfer rate - Reliable data integrity with ECC - Energy-efficient operation - Environmentally friendly design

Disadvantages: - Relatively high cost compared to lower-capacity memory modules - Requires compatible hardware for optimal performance

Working Principles

The MT53B384M64D4TX-053 WT ES:B TR memory module operates based on the principles of DDR4 SDRAM technology. It stores data in a non-volatile manner, allowing for quick retrieval and transfer of information. The module utilizes error correction techniques to ensure data integrity. It operates at a low voltage, reducing power consumption and heat generation.

Detailed Application Field Plans

The MT53B384M64D4TX-053 WT ES:B TR memory module is suitable for various applications that require high-capacity and fast data storage. Some potential application fields include:

1. Data centers: Used for server memory in large-scale data processing environments.
2. High-performance computing: Enables efficient data handling in scientific simulations and complex calculations.
3. Gaming systems: Provides ample storage for game files and enhances overall gaming performance.
4. Workstations: Supports multitasking and data-intensive tasks in professional settings.
5. Embedded systems: Facilitates reliable data storage in industrial automation and IoT devices.

Detailed and Complete Alternative Models

1. MT53B256M32D2NP-053 WT ES:B TR

   • Capacity: 256 megabytes (MB)
   • Type: DDR4 SDRAM
   • Speed: 2400 MHz
   • Voltage: 1.2 V
   • Form Factor: DIMM 288-pin
   • ECC: Yes

2. MT53B512M64D4NX-053 WT ES:B TR

   • Capacity: 512 megabytes (MB)
   • Type: DDR4 SDRAM
   • Speed: 2400 MHz
   • Voltage: 1.2 V
   • Form Factor: DIMM 288-pin
   • ECC: Yes

3. MT53B768M128D8QX-053 WT ES:B TR

   • Capacity: 768 megabytes (MB)
   • Type: DDR4 SDRAM
   • Speed: 2400 MHz
   • Voltage: 1.2 V
   • Form Factor: DIMM 288-pin
   • ECC: Yes

These alternative models offer different capacities while maintaining similar specifications to the MT53B384M64D4TX-053 WT ES:B TR memory module.

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