Micron Technology Inc.
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MT53B512M32D2GZ-062 WT:B TR

MT53B512M32D2GZ-062 WT:B TR

Product Overview

Category

The MT53B512M32D2GZ-062 WT:B TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

  • High-speed operation
  • Large storage capacity
  • Low power consumption
  • Compact package size

Package

The MT53B512M32D2GZ-062 WT:B TR is packaged in a small form factor, making it suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

The MT53B512M32D2GZ-062 WT:B TR is typically sold in bulk packaging, with quantities varying depending on customer requirements.

Specifications

  • Model: MT53B512M32D2GZ-062 WT:B TR
  • Memory Type: Dynamic Random Access Memory (DRAM)
  • Capacity: 512 megabits (64 megabytes)
  • Organization: 32M words x 16 bits x 4 banks
  • Operating Voltage: 1.2V
  • Clock Frequency: Up to 800 MHz
  • Interface: Double Data Rate 4 (DDR4)
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT53B512M32D2GZ-062 WT:B TR features a specific pin configuration that enables proper connectivity and functionality within a system. The detailed pin configuration is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. BA0
  21. BA1
  22. A0
  23. A1
  24. A2
  25. A3
  26. A4
  27. A5
  28. A6
  29. A7
  30. VSS
  31. A8
  32. A9
  33. A10
  34. A11
  35. A12
  36. A13
  37. A14
  38. A15
  39. VSS
  40. RAS#
  41. CAS#
  42. WE#
  43. CS#
  44. DM0
  45. DM1
  46. VSS
  47. DQS0#
  48. DQS0
  49. VSS
  50. DQSN0
  51. VSS
  52. DQSP0
  53. VSS
  54. DQSN1
  55. VSS
  56. DQSP1
  57. VSS
  58. DQS1
  59. VSS
  60. DM2
  61. VSS
  62. DQ0
  63. DQ1
  64. VDD

Functional Features

The MT53B512M32D2GZ-062 WT:B TR offers the following functional features:

  • High-speed data transfer
  • Auto-refresh and self-refresh capabilities
  • On-die termination (ODT) for improved signal integrity
  • Burst mode operation for efficient data access
  • Low-power standby mode for energy efficiency

Advantages and Disadvantages

Advantages

  • High-speed operation enables faster data processing
  • Large storage capacity accommodates extensive data requirements
  • Low power consumption prolongs battery life in portable devices
  • Compact package size allows for integration into space-constrained designs

Disadvantages

  • Relatively higher cost compared to other memory technologies
  • Susceptible to data loss in case of power failure without proper backup measures

Working Principles

The MT53B512M32D2GZ-062 WT:B TR operates based on the principles of dynamic random access memory (DRAM). It stores digital information in a matrix of capacitors, with each capacitor representing a single bit of data. To read or write data, the memory controller sends appropriate signals to access specific rows and columns within the memory array.

Detailed Application Field Plans

The MT53B512M32D2GZ-062 WT:B TR finds applications in various electronic devices and systems, including:

  1. Personal computers
  2. Laptops and notebooks
  3. Servers and data centers
  4. Mobile phones and tablets
  5. Gaming consoles
  6. Automotive electronics
  7. Industrial automation

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT53B512M32D2GZ-062 WT:B TR v technických řešeních

1. What is the MT53B512M32D2GZ-062 WT:B TR?

The MT53B512M32D2GZ-062 WT:B TR is a specific model of memory chip manufactured by Micron Technology. It is a 16Gb DDR4 SDRAM component designed for use in various technical solutions.

2. What is the capacity of the MT53B512M32D2GZ-062 WT:B TR?

The MT53B512M32D2GZ-062 WT:B TR has a capacity of 16 gigabits (or 2 gigabytes) per chip.

3. What is the speed rating of the MT53B512M32D2GZ-062 WT:B TR?

The MT53B512M32D2GZ-062 WT:B TR has a speed rating of DDR4-3200, which means it can transfer data at a rate of 3200 megatransfers per second.

4. What is the voltage requirement for the MT53B512M32D2GZ-062 WT:B TR?

The MT53B512M32D2GZ-062 WT:B TR operates at a standard voltage of 1.2 volts.

5. What is the form factor of the MT53B512M32D2GZ-062 WT:B TR?

The MT53B512M32D2GZ-062 WT:B TR follows the industry-standard 260-pin unbuffered small outline dual in-line memory module (SO-DIMM) form factor.

6. Is the MT53B512M32D2GZ-062 WT:B TR compatible with my device?

To determine compatibility, you need to check if your device supports DDR4 memory and if it has an available SO-DIMM slot. Consult your device's specifications or consult with the manufacturer to confirm compatibility.

7. Can I use multiple MT53B512M32D2GZ-062 WT:B TR chips together?

Yes, you can use multiple MT53B512M32D2GZ-062 WT:B TR chips together in systems that support dual-channel or quad-channel memory configurations. This can provide increased memory capacity and performance.

8. What are some typical applications for the MT53B512M32D2GZ-062 WT:B TR?

The MT53B512M32D2GZ-062 WT:B TR is commonly used in various technical solutions such as laptops, desktop computers, servers, networking equipment, and embedded systems.

9. Does the MT53B512M32D2GZ-062 WT:B TR have any built-in error correction capabilities?

No, the MT53B512M32D2GZ-062 WT:B TR does not have built-in error correction capabilities. If error correction is required, you may need to consider using ECC (Error-Correcting Code) memory modules instead.

10. Where can I purchase the MT53B512M32D2GZ-062 WT:B TR?

The MT53B512M32D2GZ-062 WT:B TR can be purchased from authorized distributors or retailers of Micron Technology products. You can check their official website or contact their sales representatives for more information on purchasing options.