NP5Q128AE3ESFC0E

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: Non-volatile, high-density storage
• Package: Surface Mount Technology (SMT)
• Essence: Flash memory
• Packaging/Quantity: Tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Capacity: 128 megabits (16 megabytes)
• Organization: 8 megabits x 16 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Serial Peripheral Interface (SPI)
• Data Retention: Up to 20 years
• Erase/Program Cycles: Minimum 100,000 cycles

Detailed Pin Configuration

The NP5Q128AE3ESFC0E has a total of 24 pins, which are assigned as follows:

1. Chip Select (/CS)
2. Serial Clock (SCK)
3. Serial Data Input (SI)
4. Serial Data Output (SO)
5. Write Protect (/WP)
6. Hold (/HOLD)
7. Ground (GND)
8. VCC Power Supply (+3.3V)
9. NC (No Connection)
10. NC (No Connection)
11. NC (No Connection)
12. NC (No Connection)
13. NC (No Connection)
14. NC (No Connection)
15. NC (No Connection)
16. NC (No Connection)
17. NC (No Connection)
18. NC (No Connection)
19. NC (No Connection)
20. NC (No Connection)
21. NC (No Connection)
22. NC (No Connection)
23. NC (No Connection)
24. NC (No Connection)

Functional Features

• High-speed data transfer using SPI interface
• Low power consumption
• Built-in write protection and hold functions
• Wide operating temperature range for various applications
• Reliable data retention and endurance

Advantages and Disadvantages

Advantages: - Non-volatile memory ensures data retention even without power - High-density storage capacity - Compact SMT package allows for easy integration into electronic devices - SPI interface enables simple communication with microcontrollers

Disadvantages: - Limited erase/program cycles compared to other memory technologies - Relatively higher cost per bit compared to traditional non-volatile memories

Working Principles

The NP5Q128AE3ESFC0E is based on flash memory technology. It utilizes a floating gate transistor structure to store and retrieve digital information. The memory cells are organized in a grid-like array, with each cell capable of storing one or more bits of data. The data can be written, read, and erased using electrical signals applied through the SPI interface.

Detailed Application Field Plans

The NP5Q128AE3ESFC0E is widely used in various electronic devices that require non-volatile memory for data storage. Some common application fields include: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment systems, instrument clusters) - Industrial equipment (e.g., control systems, data loggers) - Medical devices (e.g., patient monitoring systems, diagnostic equipment)

Detailed and Complete Alternative Models

• NP5Q64AE3ESFC0E: 64 megabit (8 megabyte) version of the same flash memory IC.
• NP5Q256AE3ESFC0E: 256 megabit (32 megabyte) version of the same flash memory IC.
• NP5Q512AE3ESFC0E: 512 megabit (64 megabyte) version of the same flash memory IC.
• NP5Q1GAE3ESFC0E: 1 gigabit (128 megabyte) version of the same flash memory IC.

These alternative models offer different memory capacities to suit specific application requirements.

Note: The content provided above is a sample and may not reflect actual product specifications. Please refer to the manufacturer's documentation for accurate information.