PC28F128J3F75D

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory for long-term data storage
• Packaging/Quantity: Available in various packaging options, typically sold in bulk quantities

Specifications

• Capacity: 128 gigabits (16 gigabytes)
• Interface: Parallel
• Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The PC28F128J3F75D flash memory IC has a specific pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A23: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#/BYTE#: Ready/Busy or Byte Enable control
9. RY/BY#: Ready/Busy output
10. WP#/ACC: Write Protect or Acceleration control
11. RESET#: Reset control
12. VPP: Programming voltage supply
13. NC: No connection

Note: The pin configuration may vary depending on the package type.

Functional Features

• High-speed read and write operations
• Reliable data retention
• Low power consumption
• Error correction capabilities
• Advanced wear-leveling algorithms for extended lifespan
• Support for various interface protocols
• Secure data protection features (optional)

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast data access speeds - Non-volatile memory retains data even without power - Suitable for a wide range of electronic devices - High endurance for frequent read/write operations

Disadvantages: - Relatively higher cost compared to other storage options - Limited write endurance compared to some newer technologies - Susceptible to physical damage if mishandled

Working Principles

The PC28F128J3F75D flash memory operates based on the principles of floating-gate transistors. It uses electrically isolated gates to store and retrieve digital information. When data is written, electrons are trapped in the floating gate, altering the transistor's behavior. During read operations, the stored charge is measured to determine the stored data.

Detailed Application Field Plans

The PC28F128J3F75D flash memory is widely used in various electronic devices, including but not limited to:

1. Solid-State Drives (SSDs)
2. Digital cameras
3. Mobile phones
4. Tablets
5. Embedded systems
6. Automotive electronics
7. Industrial control systems

Its high capacity, fast read/write speeds, and reliability make it suitable for applications that require large amounts of non-volatile data storage.

Detailed and Complete Alternative Models

1. PC28F256J3F75D: 256 gigabit (32 gigabyte) flash memory with similar specifications
2. PC28F512J3F75D: 512 gigabit (64 gigabyte) flash memory with similar specifications
3. PC28F064J3F75D: 64 gigabit (8 gigabyte) flash memory with similar specifications

These alternative models offer different storage capacities while maintaining compatibility with the PC28F128J3F75D in terms of pin configuration and functionality.

Note: The list of alternative models is not exhaustive and may vary based on availability and technological advancements.

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