PF48F4000P0ZBQE3

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
  • Low power consumption
• Package: Integrated Circuit (IC)
• Essence: Stores digital information in a compact and durable format
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Capacity: 4 gigabytes (GB)
• Interface: Parallel
• Voltage: 3.3 volts (V)
• Access Time: 70 nanoseconds (ns)
• Operating Temperature Range: -40°C to +85°C
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RY/BY#: Ready/busy status output
9. WP#: Write protect control
10. RESET#: Reset control

Functional Features

• High-speed data transfer
• Reliable data retention
• Easy integration into various electronic systems
• Support for multiple read and write operations
• Built-in error correction mechanisms
• Compatibility with industry-standard interfaces

Advantages

• Large storage capacity allows for extensive data storage
• Fast access time enables quick retrieval of information
• Low power consumption prolongs battery life in portable devices
• Compact package size facilitates space-saving designs
• High endurance ensures long-term reliability

Disadvantages

• Relatively higher cost compared to other storage technologies
• Limited write endurance compared to some alternative memory types
• Susceptible to data loss in case of power failure or improper handling

Working Principles

The PF48F4000P0ZBQE3 flash memory utilizes a floating-gate transistor structure to store and retrieve digital information. It employs a combination of electrical charges to represent binary data, with the presence or absence of charge indicating the logical states of 1 and 0, respectively. The memory cells are organized into an array, and each cell can be individually programmed or erased using specific voltage levels applied to the control pins.

Detailed Application Field Plans

• Consumer Electronics: Used in smartphones, tablets, digital cameras, and portable media players for data storage.
• Automotive: Employed in infotainment systems, navigation devices, and engine control units for storing critical information.
• Industrial Automation: Utilized in programmable logic controllers (PLCs), human-machine interfaces (HMIs), and data loggers for reliable data storage.
• Networking Equipment: Integrated into routers, switches, and network attached storage (NAS) devices for storing configuration settings and firmware updates.

Detailed and Complete Alternative Models

• PF32F1000P0XBQ0E: 1GB flash memory with similar specifications
• PF64F8000P0ZBQE3: 8GB flash memory with similar characteristics
• PF128F16000P0ZBQE3: 16GB flash memory with higher capacity

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