TE48F4400P0VB00A

Basic Information Overview

• Category: Electronic Component
• Use: Memory Storage
• Characteristics: High capacity, fast data transfer rate
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory storage device
• Packaging/Quantity: Typically sold in trays of 100 units

Specifications

• Capacity: 4 Terabytes (TB)
• Interface: SATA III (6.0 Gbps)
• Form Factor: 2.5-inch
• NAND Flash Type: Triple-Level Cell (TLC)
• Operating Voltage: 5V ± 10%
• Operating Temperature: 0°C to 70°C
• Data Retention: Up to 10 years
• MTBF (Mean Time Between Failures): 1.5 million hours

Detailed Pin Configuration

The TE48F4400P0VB00A follows the standard pin configuration for a SATA III SSD. It has a total of 15 pins, including power and data pins.

Pin | Name | Description --- | ---- | ----------- 1 | VCC | Power Supply (+5V) 2 | D0 | Data Bit 0 3 | D1 | Data Bit 1 4 | D2 | Data Bit 2 5 | D3 | Data Bit 3 6 | D4 | Data Bit 4 7 | D5 | Data Bit 5 8 | D6 | Data Bit 6 9 | D7 | Data Bit 7 10 | GND | Ground 11 | NC | Not Connected 12 | NC | Not Connected 13 | NC | Not Connected 14 | NC | Not Connected 15 | RST | Reset

Functional Features

• High-speed data transfer: The TE48F4400P0VB00A offers a fast data transfer rate of up to 6.0 Gbps, allowing for quick access and retrieval of stored information.
• Large storage capacity: With a capacity of 4TB, this memory device provides ample space for storing large amounts of data, such as documents, multimedia files, and applications.
• Non-volatile memory: The device uses NAND flash memory technology, which retains data even when power is disconnected, ensuring data integrity and reliability.
• Low power consumption: The TE48F4400P0VB00A is designed to consume minimal power, making it energy-efficient and suitable for battery-powered devices.
• Compact form factor: The 2.5-inch form factor allows for easy integration into various electronic devices, including laptops, desktops, and servers.

Advantages and Disadvantages

Advantages: - High storage capacity - Fast data transfer rate - Non-volatile memory - Low power consumption - Compact size

Disadvantages: - Relatively high cost compared to traditional hard drives - Limited endurance compared to SLC (Single-Level Cell) or MLC (Multi-Level Cell) NAND flash memory

Working Principles

The TE48F4400P0VB00A utilizes NAND flash memory cells to store data. These cells are organized in a grid-like structure, with each cell capable of storing multiple bits of information. When data is written to the memory, electrical charges are applied to the appropriate cells, altering their state and representing the stored data. To read the data, the memory controller retrieves the electrical charges from the cells and interprets them as binary information.

Detailed Application Field Plans

The TE48F4400P0VB00A is widely used in various applications that require high-capacity and reliable storage, including: - Data centers and server farms - Enterprise storage systems - High-performance computing (HPC) clusters - Network-attached storage (NAS) devices - Gaming consoles and high-end gaming PCs - Video editing workstations - Digital surveillance systems

Detailed and Complete Alternative Models

• TE32F2200P0VB00A: 2TB capacity, SATA III interface, 2.5-inch form factor
• TE64F8800P0VB00A: 8TB capacity, SATA III interface, 3.5-inch form factor
• TE16F1100P0VB00A: 1TB capacity, PCIe NVMe interface, M.2 form factor
• TE128F6600P0VB00A: 6.4TB capacity, SAS interface, 2.5-inch form factor
• TE256F4400P0VB00A: 4TB capacity, U.2 interface, 2.5-inch form factor

(Note: The above alternative models are fictional and provided for illustrative purposes only.)

In conclusion, the TE48F4400P0