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1N5935D G

1N5935D G - Semiconductor Diode

Basic Information Overview

  • Category: Semiconductor Diode
  • Use: Rectification and voltage regulation
  • Characteristics: High current capability, low forward voltage drop
  • Package: DO-201AD (DO-27)
  • Essence: Efficient rectification and voltage regulation
  • Packaging/Quantity: Bulk packaging, typically sold in reels of 500 or 1000 units

Specifications

  • Voltage Rating: 3.0V
  • Current Rating: 1.5A
  • Forward Voltage Drop: 1.1V at 1A
  • Reverse Leakage Current: 10µA at 25°C

Detailed Pin Configuration

The 1N5935D G is a two-terminal device with an anode and a cathode. The anode is connected to the positive terminal of the circuit, while the cathode is connected to the negative terminal.

Functional Features

  • Efficient rectification of AC to DC
  • Voltage regulation in electronic circuits
  • Protection against reverse voltage

Advantages and Disadvantages

Advantages: - High current capability - Low forward voltage drop - Fast switching speed

Disadvantages: - Limited reverse voltage tolerance - Sensitivity to temperature variations

Working Principles

The 1N5935D G operates on the principle of semiconductor junction. When forward-biased, it allows current to flow in one direction, effectively converting AC to DC. In reverse bias, it blocks the flow of current, providing protection against reverse voltage.

Detailed Application Field Plans

The 1N5935D G is commonly used in power supplies, voltage regulators, and rectifier circuits in various electronic devices such as consumer electronics, automotive systems, and industrial equipment.

Detailed and Complete Alternative Models

  • 1N4001: General-purpose rectifier diode
  • 1N5819: Schottky barrier diode
  • 1N5399: General-purpose rectifier diode
  • 1N5408: Standard recovery rectifier

This comprehensive range of alternative models provides options for different voltage and current requirements in rectification and voltage regulation applications.


This content provides a detailed overview of the 1N5935D G semiconductor diode, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 1N5935D G v technických řešeních

  1. What is the 1N5935D G diode used for?

    • The 1N5935D G diode is commonly used as a voltage regulator in various technical solutions.
  2. What is the maximum forward voltage of the 1N5935D G diode?

    • The maximum forward voltage of the 1N5935D G diode is typically around 1.5V.
  3. What is the maximum reverse voltage of the 1N5935D G diode?

    • The maximum reverse voltage of the 1N5935D G diode is 36V.
  4. What are the typical applications of the 1N5935D G diode?

    • Typical applications of the 1N5935D G diode include voltage regulation, overvoltage protection, and general rectification in electronic circuits.
  5. What is the maximum current rating of the 1N5935D G diode?

    • The maximum current rating of the 1N5935D G diode is typically around 3A.
  6. Can the 1N5935D G diode be used in high-temperature environments?

    • Yes, the 1N5935D G diode is designed to operate effectively in high-temperature environments, making it suitable for a wide range of applications.
  7. Is the 1N5935D G diode suitable for automotive applications?

    • Yes, the 1N5935D G diode is often used in automotive electronics due to its robustness and reliability.
  8. What is the package type of the 1N5935D G diode?

    • The 1N5935D G diode typically comes in a DO-201AD package.
  9. Does the 1N5935D G diode require a heat sink for certain applications?

    • Depending on the specific application and power dissipation, a heat sink may be recommended to ensure optimal performance of the 1N5935D G diode.
  10. Are there any common failure modes associated with the 1N5935D G diode?

    • Common failure modes for the 1N5935D G diode include thermal runaway under high current conditions and voltage breakdown under reverse bias, so proper design considerations should be taken into account to mitigate these risks.