2N3507AL

Product Overview

Use

It is commonly used in high-power amplifier and switching applications.

Characteristics

High voltage capability
High current capability
Low saturation voltage

Package

The 2N3507AL is typically available in a TO-220 package.

Essence

This transistor is essential for amplifying and switching high-power signals in electronic circuits.

Packaging/Quantity

The 2N3507AL is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

Collector-Emitter Voltage (VCEO): 400V
Collector Current (IC): 1A
Power Dissipation (PD): 40W
Transition Frequency (FT): 0.8MHz
Operating Temperature Range: -65°C to 200°C

Detailed Pin Configuration

The 2N3507AL has three pins: 1. Base (B) 2. Emitter (E) 3. Collector (C)

Functional Features

High voltage and current handling capabilities
Low saturation voltage for efficient switching
Wide operating temperature range

Advantages

Suitable for high-power applications
Reliable performance under extreme conditions
Low saturation voltage reduces power loss

Disadvantages

Limited transition frequency compared to some modern alternatives
Relatively low collector current compared to newer transistors

Working Principles

The 2N3507AL operates as a switch or amplifier by controlling the flow of current between the collector and emitter terminals using the base terminal.

Detailed Application Field Plans

The 2N3507AL is commonly used in the following applications: - Audio amplifiers - Power supplies - Motor control circuits - High-voltage switching circuits

Detailed and Complete Alternative Models

Some alternative models to the 2N3507AL include: - TIP31C - MJ15003 - MJE3055T - 2SC5200

In conclusion, the 2N3507AL is a versatile silicon NPN power transistor with high voltage and current capabilities, making it suitable for various high-power applications. While it has certain limitations compared to newer models, its reliability and performance under extreme conditions make it a popular choice in many electronic circuits.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 2N3507AL v technických řešeních

What is the 2N3507AL transistor used for?
- The 2N3507AL is a high-power NPN bipolar junction transistor (BJT) commonly used in power amplifier and switching applications.
What are the key specifications of the 2N3507AL transistor?
- The 2N3507AL has a maximum collector current of 4A, a maximum collector-emitter voltage of 80V, and a maximum power dissipation of 50W.
How can the 2N3507AL be used in power amplifier circuits?
- The 2N3507AL can be used as the output transistor in audio amplifiers, RF amplifiers, and other high-power amplifier designs.
Can the 2N3507AL be used in switching applications?
- Yes, the 2N3507AL is suitable for use in high-speed switching applications due to its high current and voltage ratings.
What are the typical operating conditions for the 2N3507AL?
- The 2N3507AL is typically operated with a base current of 0.8A and a collector-emitter saturation voltage of 1.5V.
Are there any specific considerations for heat dissipation when using the 2N3507AL?
- Yes, proper heat sinking is important to ensure the 2N3507AL operates within its specified temperature range, especially in high-power applications.
What are some common circuit configurations for the 2N3507AL?
- Common configurations include single-ended and push-pull amplifier designs, as well as various switching circuit topologies.
Can the 2N3507AL be used in automotive or industrial applications?
- Yes, the 2N3507AL is suitable for use in automotive and industrial power control and amplification systems.
What are the typical failure modes of the 2N3507AL?
- Common failure modes include thermal runaway due to inadequate heat dissipation, overvoltage stress, and excessive current.
Where can I find detailed application notes and reference designs for the 2N3507AL?
- Detailed application notes and reference designs for the 2N3507AL can be found in the manufacturer's datasheet, as well as in technical literature and online resources related to power transistors and amplifier design.