Microsemi Corporation
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JAN2N6768
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JAN2N6768

Product Overview

Category

The JAN2N6768 belongs to the category of semiconductor devices, specifically a high-power NPN bipolar junction transistor (BJT).

Use

It is commonly used in power amplification and switching applications due to its high current and voltage capabilities.

Characteristics

  • High power handling capacity
  • Low saturation voltage
  • Fast switching speed

Package

The JAN2N6768 is typically available in a TO-204AA package, which provides good thermal performance and mechanical strength.

Essence

The essence of JAN2N6768 lies in its ability to efficiently amplify and switch high-power signals in various electronic circuits.

Packaging/Quantity

It is usually supplied in bulk packaging with quantities varying based on the supplier and customer requirements.

Specifications

  • Collector-Emitter Voltage (VCEO): 100V
  • Collector-Base Voltage (VCBO): 120V
  • Emitter-Base Voltage (VEBO): 7V
  • Collector Current (IC): 15A
  • Power Dissipation (PD): 150W
  • Transition Frequency (fT): 30MHz
  • Operating Temperature: -65°C to 200°C

Detailed Pin Configuration

  1. Base (B)
  2. Collector (C)
  3. Emitter (E)

Functional Features

  • High current gain
  • Low output capacitance
  • Good linearity in amplification

Advantages

  • High power handling capability
  • Low saturation voltage reduces power loss
  • Fast switching speed for efficient operation in switching applications

Disadvantages

  • Relatively large physical size due to high power handling capacity
  • Limited frequency response compared to smaller signal transistors

Working Principles

The JAN2N6768 operates based on the principles of bipolar junction transistors, where the flow of current between the collector and emitter is controlled by the current flowing into the base terminal.

Detailed Application Field Plans

The JAN2N6768 finds extensive use in: - Audio amplifiers - Power supplies - Motor control circuits - RF power amplifiers

Detailed and Complete Alternative Models

  • 2N3055
  • MJ15003
  • MJE15032
  • TIP35C

In conclusion, the JAN2N6768 is a high-power NPN BJT that offers excellent performance in power amplification and switching applications. Its robust characteristics and versatile applications make it a popular choice in various electronic circuits.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací JAN2N6768 v technických řešeních

  1. What is the JAN2N6768 transistor used for?

    • The JAN2N6768 is a high-reliability, high-power NPN bipolar junction transistor (BJT) commonly used in military and aerospace applications.

  2. What are the key specifications of the JAN2N6768 transistor?

    • The JAN2N6768 features a maximum collector-emitter voltage of 80V, a continuous collector current of 4A, and a power dissipation of 50W.

  3. In what types of technical solutions is the JAN2N6768 commonly employed?

    • The JAN2N6768 is often used in power amplifiers, switching circuits, and other high-power applications where reliability and ruggedness are crucial.

  4. What are the temperature range and storage conditions for the JAN2N6768?

    • The JAN2N6768 is designed to operate within a temperature range of -65°C to +200°C and should be stored in a dry environment with temperatures between -65°C and +150°C.

  5. What are the recommended mounting and soldering techniques for the JAN2N6768?

    • The JAN2N6768 should be mounted on a suitable heat sink using a thermally conductive grease or pad, and care should be taken to avoid excessive mechanical stress during soldering.

  6. Are there any specific precautions to consider when designing with the JAN2N6768?

    • Designers should ensure proper heat dissipation, avoid operating the transistor beyond its specified limits, and adhere to the manufacturer's application notes and guidelines.

  7. Can the JAN2N6768 be used in automotive applications?

    • While the JAN2N6768 is not specifically designed for automotive use, it may be suitable for certain non-critical automotive applications where its specifications meet the requirements.

  8. What are some common failure modes of the JAN2N6768?

    • Common failure modes include thermal overstress, overvoltage conditions, and excessive current leading to breakdown or degradation of the transistor.

  9. Is the JAN2N6768 suitable for high-frequency applications?

    • The JAN2N6768 is primarily designed for medium to high-power applications and may not be optimal for high-frequency operation due to its inherent capacitance and transit time effects.

  10. Where can I find detailed application notes and reference designs for the JAN2N6768?

    • Detailed application notes, reference designs, and specifications for the JAN2N6768 can typically be found in the manufacturer's datasheet, application guides, and technical resources.