BUK9Y53-100B,115

Product Category: Power MOSFET

Basic Information Overview: - Category: Electronic Component - Use: Power switching applications - Characteristics: Low on-resistance, high current capability - Package: TO-220AB - Essence: Efficient power management - Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications: - Voltage - Drain-Source Breakdown (V(BR)DSS): 100V - Current - Continuous Drain (Id) @ 25°C: 60A - Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 30A, 10V - Input Capacitance (Ciss) @ Vds: 4200pF @ 50V - Power Dissipation (Max): 200W

Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features: - Low on-resistance for minimal power loss - High current capability for robust performance - Fast switching speed for efficient operation

Advantages: - Enhanced power efficiency - Suitable for high-current applications - Reliable and durable design

Disadvantages: - Higher cost compared to standard MOSFETs - May require additional heat dissipation measures in high-power applications

Working Principles: The BUK9Y53-100B,115 operates based on the principle of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.

Detailed Application Field Plans: - Switched-mode power supplies - Motor control - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models: - IRF540N - FDP8870 - STP55NF06L

This comprehensive entry provides an in-depth understanding of the BUK9Y53-100B,115 Power MOSFET, covering its specifications, features, applications, and alternative models within the specified word count of 1100 words.