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PBSS4160DS,115

PBSS4160DS,115

Product Overview

  • Category: Transistor
  • Use: Switching applications
  • Characteristics: High current capability, low VCEsat, and fast switching speed
  • Package: SOT457 (SC-74)
  • Essence: NPN bipolar junction transistor
  • Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

  • Collector-Base Voltage (VCBO): 60V
  • Collector-Emitter Voltage (VCEO): 60V
  • Emitter-Base Voltage (VEBO): 5V
  • Continuous Collector Current (IC): 1A
  • Total Power Dissipation (PTOT): 1.25W
  • Transition Frequency (fT): 250MHz
  • Operating Temperature Range: -65°C to 150°C

Detailed Pin Configuration

  1. Base (B)
  2. Emitter (E)
  3. Collector (C)

Functional Features

  • High current gain
  • Low saturation voltage
  • Fast switching speed
  • Low equivalent series resistance

Advantages and Disadvantages

Advantages

  • Suitable for high-speed switching applications
  • Low power dissipation
  • Small package size

Disadvantages

  • Limited maximum collector current compared to other transistors in the same category

Working Principles

The PBSS4160DS,115 is a NPN bipolar junction transistor that operates based on the flow of charge carriers (electrons) from the emitter to the collector when a small current is applied to the base terminal.

Detailed Application Field Plans

The PBSS4160DS,115 is commonly used in various electronic circuits such as: - Switching power supplies - LED lighting drivers - Motor control circuits - Audio amplifiers

Detailed and Complete Alternative Models

  • BC847BS,115
  • BC846BS,115
  • BC856BS,115
  • BC857BS,115

In conclusion, the PBSS4160DS,115 is a versatile NPN transistor suitable for high-speed switching applications with its low VCEsat and fast switching speed. While it has limitations in terms of maximum collector current, its compact package and low power dissipation make it an attractive choice for various electronic designs.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací PBSS4160DS,115 v technických řešeních

  1. What is PBSS4160DS,115?

    • PBSS4160DS,115 is a high-performance NPN bipolar junction transistor (BJT) designed for use in various technical solutions.
  2. What are the key features of PBSS4160DS,115?

    • The key features of PBSS4160DS,115 include high current capability, low saturation voltage, and fast switching speed.
  3. In what applications can PBSS4160DS,115 be used?

    • PBSS4160DS,115 can be used in applications such as power management, motor control, lighting, and other general-purpose switching applications.
  4. What is the maximum collector current of PBSS4160DS,115?

    • The maximum collector current of PBSS4160DS,115 is typically around 1.6A.
  5. What is the typical collector-emitter saturation voltage of PBSS4160DS,115?

    • The typical collector-emitter saturation voltage of PBSS4160DS,115 is around 300mV at a collector current of 1A.
  6. Is PBSS4160DS,115 suitable for high-frequency applications?

    • Yes, PBSS4160DS,115 is suitable for high-frequency applications due to its fast switching speed.
  7. What is the maximum power dissipation of PBSS4160DS,115?

    • The maximum power dissipation of PBSS4160DS,115 is typically around 1.25W.
  8. Does PBSS4160DS,115 require any external components for operation?

    • PBSS4160DS,115 may require external components such as resistors, capacitors, and inductors depending on the specific application and circuit design.
  9. Can PBSS4160DS,115 be used in automotive applications?

    • Yes, PBSS4160DS,115 is suitable for automotive applications where its high current capability and low saturation voltage can be advantageous.
  10. Where can I find detailed technical specifications and application notes for PBSS4160DS,115?

    • Detailed technical specifications and application notes for PBSS4160DS,115 can be found in the product datasheet provided by the manufacturer or distributor.