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PDTC114YT,215
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PDTC114YT,215

Product Overview

  • Belongs to: Semiconductor category
  • Use: Signal switching and amplification in electronic circuits
  • Characteristics: Small form factor, high gain, low power consumption
  • Package: SOT416 (SC-75)
  • Essence: NPN bipolar junction transistor
  • Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

  • Collector-Base Voltage (VCBO): 50V
  • Collector-Emitter Voltage (VCEO): 45V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Power Dissipation (Ptot): 200mW
  • Transition Frequency (fT): 250MHz
  • Noise Figure (NF): 4dB

Detailed Pin Configuration

  1. Collector (C)
  2. Base (B)
  3. Emitter (E)

Functional Features

  • High current gain
  • Low noise figure
  • Fast switching speed

Advantages

  • Small package size
  • Suitable for high-frequency applications
  • Low power consumption

Disadvantages

  • Limited collector current capability
  • Susceptible to thermal runaway at high currents

Working Principles

The PDTC114YT,215 operates as a signal amplifier or switch by controlling the flow of current between its collector and emitter terminals based on the input signal applied to its base terminal.

Detailed Application Field Plans

  • Audio amplification circuits
  • Radio frequency (RF) signal amplification
  • Switching circuits in communication systems

Detailed and Complete Alternative Models

  • BC847B,235
  • MMBT3904LT1G
  • 2N3904

This comprehensive entry provides an in-depth understanding of the PDTC114YT,215 semiconductor, covering its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací PDTC114YT,215 v technických řešeních

  1. What is the PDTC114YT,215 used for?

    • The PDTC114YT,215 is commonly used as a general-purpose NPN transistor in various technical solutions.

  2. What are the key specifications of the PDTC114YT,215?

    • The PDTC114YT,215 has a maximum collector current of 100mA, a maximum collector-emitter voltage of 50V, and a DC current gain (hFE) of 100 to 400.

  3. Can the PDTC114YT,215 be used for switching applications?

    • Yes, the PDTC114YT,215 can be used for low-power switching applications due to its moderate current and voltage ratings.

  4. Is the PDTC114YT,215 suitable for amplification purposes?

    • The PDTC114YT,215 can be used for small-signal amplification in low-power circuits.

  5. What are the typical operating conditions for the PDTC114YT,215?

    • The PDTC114YT,215 operates within a temperature range of -55°C to 150°C and is suitable for use in various electronic devices.

  6. Does the PDTC114YT,215 require any specific biasing or drive circuitry?

    • The PDTC114YT,215 requires standard NPN transistor biasing and drive circuitry for proper operation.

  7. Are there any common alternative transistors to the PDTC114YT,215?

    • Some common alternatives to the PDTC114YT,215 include the 2N3904, BC547, and PN2222A transistors, which have similar characteristics.

  8. What are the typical applications of the PDTC114YT,215 in technical solutions?

    • The PDTC114YT,215 is often used in low-power amplifiers, signal processing circuits, and general switching applications.

  9. What are the recommended soldering and handling practices for the PDTC114YT,215?

    • It is recommended to follow standard ESD (electrostatic discharge) precautions and soldering guidelines when handling the PDTC114YT,215 to prevent damage.

  10. Where can I find detailed technical documentation for the PDTC114YT,215?

    • Detailed technical documentation for the PDTC114YT,215 can be found in the datasheet provided by the manufacturer, which includes electrical characteristics, package information, and application notes.