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PSMN1R7-60BS,118
Product Overview
Category
The PSMN1R7-60BS,118 belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications such as voltage regulation and switching circuits.
Characteristics
- High power handling capability
- Low on-state resistance
- Fast switching speed
- Low gate drive requirements
Package
The PSMN1R7-60BS,118 is typically available in a TO-220 package.
Essence
This product is essential for efficient power control and management in various electronic systems.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 100A
- RDS(ON) (Max) @ VGS = 10V: 1.7mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Power Dissipation (PD): 300W
Detailed Pin Configuration
The PSMN1R7-60BS,118 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low on-state resistance for minimal power loss
- High current-carrying capability
- Fast switching speed for improved efficiency
- Robust construction for reliable performance in demanding applications
Advantages
- Enhanced power efficiency
- Reduced heat dissipation
- Suitable for high-current applications
- Compatibility with various driving circuits
Disadvantages
- Higher cost compared to standard MOSFETs
- Larger physical footprint due to higher power handling capability
Working Principles
The PSMN1R7-60BS,118 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
This power MOSFET is widely used in: - Switch-mode power supplies - Motor control circuits - Automotive electronics - Industrial automation systems
Detailed and Complete Alternative Models
Some alternative models to PSMN1R7-60BS,118 include: - IRF3205 - FDP8878 - STP55NF06L
In conclusion, the PSMN1R7-60BS,118 power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, despite its higher cost and larger size compared to standard MOSFETs.
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