BFG325W/XR,115

Product Category: Transistor

Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification of electrical signals - Characteristics: High gain, low noise, and high frequency capability - Package: SOT89 (Plastic Encapsulated Transistor) - Essence: Small-signal NPN transistor - Packaging/Quantity: Typically available in reels of 3000 units

Specifications: - Maximum Power Dissipation: 1.5 W - Collector-Base Voltage (VCBO): 15 V - Collector-Emitter Voltage (VCEO): 12 V - Emitter-Base Voltage (VEBO): 3 V - Collector Current (IC): 0.8 A - DC Current Gain (hFE): 100 to 400 - Transition Frequency (fT): 9 GHz

Detailed Pin Configuration: - Pin 1 (Emitter) - Pin 2 (Base) - Pin 3 (Collector)

Functional Features: - High-frequency operation - Low noise amplification - Suitable for RF applications

Advantages: - High gain - Low noise - Wide frequency response

Disadvantages: - Limited power handling capability - Susceptible to thermal runaway at high currents

Working Principles: The BFG325W/XR,115 operates based on the principles of bipolar junction transistors, utilizing the movement of charge carriers across its semiconductor junctions to amplify electrical signals.

Detailed Application Field Plans: - Radio frequency (RF) amplification - Signal amplification in communication systems - Oscillator circuits in high-frequency applications

Detailed and Complete Alternative Models: - BFG425W/XR,115 - BFG540W/XR,115 - BFG196W/XR,115

This comprehensive entry provides a detailed understanding of the BFG325W/XR,115 transistor, covering its category, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.