MRF6VP3450HR5

Product Overview

Use

It is used in high-frequency applications such as radio frequency (RF) amplifiers and transmitters.

Characteristics

High power output
High efficiency
Broadband capability

Package

The MRF6VP3450HR5 is typically available in a ceramic package with metal flange for efficient heat dissipation.

Essence

This transistor is essential for achieving high-power RF amplification in various communication and radar systems.

Packaging/Quantity

The MRF6VP3450HR5 is usually sold individually or in small quantities, depending on the supplier.

Specifications

Frequency Range: 500 MHz to 2500 MHz
Power Output: 350 Watts
Efficiency: >70%
Voltage Rating: 50V
Current Rating: 20A

Detailed Pin Configuration

The MRF6VP3450HR5 has a standard pin configuration with specific connections for gate, drain, and source terminals. It is important to refer to the datasheet for the exact pinout details.

Functional Features

High gain
Wide bandwidth
Excellent linearity
Robustness against mismatched loads

Advantages

High power output capability
Suitable for broadband applications
Reliable performance under varying load conditions

Disadvantages

Higher cost compared to lower power transistors
Requires careful matching and biasing for optimal performance

Working Principles

The MRF6VP3450HR5 operates based on the principles of RF amplification using field-effect transistor (FET) technology. It amplifies input RF signals to deliver high-power output while maintaining linearity and efficiency.

Detailed Application Field Plans

The MRF6VP3450HR5 is commonly used in: - High-power RF amplifiers for base stations - Radar systems - Broadcast transmitters - Amateur radio amplifiers

Detailed and Complete Alternative Models

MRF6VP3450HSR5
MRF6VP3450HSR3
MRF6VP3450H

In conclusion, the MRF6VP3450HR5 is a high-power RF transistor with excellent performance characteristics suitable for a wide range of high-frequency applications.

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