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MRF7P20040HR5
Product Overview
- Category: RF Power Transistor
- Use: Amplification of radio frequency signals in high-power applications
- Characteristics: High power gain, high efficiency, and wide bandwidth
- Package: Hermetic flange-mount package
- Essence: Designed for use in high-power industrial, scientific, and medical (ISM) applications
- Packaging/Quantity: Available in tape and reel packaging, quantity varies by supplier
Specifications
- Frequency Range: 728 - 960 MHz
- Output Power: 400 W
- Gain: 17.5 dB
- Efficiency: 70%
- Voltage: 50 V
- Current: 16 A
- Operating Temperature: -30°C to +110°C
Detailed Pin Configuration
- Pin 1: Collector
- Pin 2: Base
- Pin 3: Emitter
- Pin 4: Not connected
- Pin 5: Thermal pad
Functional Features
- High power gain and efficiency
- Broadband capability
- Excellent thermal stability
- High ruggedness and reliability
Advantages
- Suitable for high-power RF applications
- Wide operating temperature range
- Hermetic packaging ensures durability in harsh environments
Disadvantages
- Higher cost compared to lower power transistors
- Requires careful thermal management due to high power dissipation
Working Principles
The MRF7P20040HR5 operates on the principles of RF amplification, utilizing its high gain and efficiency to amplify input RF signals while maintaining stability and reliability under high-power conditions.
Detailed Application Field Plans
This transistor is ideal for use in industrial, scientific, and medical (ISM) applications such as RF heating, plasma generation, and RF welding. It can also be employed in high-power communication systems and radar applications.
Detailed and Complete Alternative Models
- MRF7S21110HSR5: Similar characteristics with higher output power
- MRF6VP2600H: Lower frequency range with comparable power and gain
- MRF8S9260HSR5: Higher frequency range with similar power and efficiency
This entry provides a comprehensive overview of the MRF7P20040HR5 RF Power Transistor, including its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MRF7P20040HR5 v technických řešeních
What is MRF7P20040HR5?
- MRF7P20040HR5 is a high-power RF transistor designed for use in applications such as radar systems, industrial heating, and medical equipment.
What is the maximum power output of MRF7P20040HR5?
- The maximum power output of MRF7P20040HR5 is typically around 400 watts.
What frequency range does MRF7P20040HR5 operate in?
- MRF7P20040HR5 operates in the frequency range of 2110 to 2170 MHz.
What are the key features of MRF7P20040HR5?
- Some key features of MRF7P20040HR5 include high power gain, high efficiency, and excellent thermal stability.
What are the typical applications of MRF7P20040HR5?
- Typical applications of MRF7P20040HR5 include base station power amplifiers, wireless infrastructure, and other high-power RF applications.
What is the recommended operating voltage for MRF7P20040HR5?
- The recommended operating voltage for MRF7P20040HR5 is typically around 28 volts.
Does MRF7P20040HR5 require any special heat dissipation measures?
- Yes, due to its high power output, MRF7P20040HR5 requires efficient heat dissipation measures such as proper thermal management and heat sinks.
Is MRF7P20040HR5 suitable for pulsed or continuous wave (CW) operation?
- MRF7P20040HR5 is suitable for both pulsed and CW operation, making it versatile for different types of RF applications.
What are the typical input and output impedance values for MRF7P20040HR5?
- The typical input and output impedance values for MRF7P20040HR5 are 50 ohms.
Are there any specific precautions to consider when integrating MRF7P20040HR5 into a technical solution?
- It is important to ensure proper matching networks, biasing, and RF layout considerations when integrating MRF7P20040HR5 into a technical solution to optimize its performance and reliability.