MRF8P20140WHR5

Introduction

The MRF8P20140WHR5 is a high-power RF transistor designed for use in various applications. This entry provides an overview of the product, including its category, use, characteristics, packaging, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

Category: High-Power RF Transistor
Use: Amplification of radio frequency signals
Characteristics: High power output, wide frequency range, high efficiency
Package: TO-270-4 (NI-1230)
Essence: Power amplification in RF communication systems
Packaging/Quantity: Individual units packaged in protective containers

Specifications

Frequency Range: 2110 - 2170 MHz
Output Power: 14 W
Gain: 15 dB
Efficiency: 55%
Voltage: 28 V
Current: 1.5 A

Detailed Pin Configuration

The MRF8P20140WHR5 has a 4-pin configuration: 1. Collector (C) 2. Base (B) 3. Emitter (E) 4. Ground (GND)

Functional Features

High power gain
Broadband capability
High linearity
Thermally enhanced package for improved reliability

Advantages and Disadvantages

Advantages

High power output
Wide frequency range
High efficiency
Enhanced reliability due to thermal packaging

Disadvantages

Higher cost compared to lower power transistors
Requires careful thermal management due to high power output

Working Principles

The MRF8P20140WHR5 operates on the principle of amplifying RF signals using a combination of high gain and efficiency. When biased and driven with appropriate input signals, it delivers amplified output signals within the specified frequency range.

Detailed Application Field Plans

The MRF8P20140WHR5 is suitable for use in the following applications: - Cellular base stations - Wireless infrastructure - RF communication systems - Radar systems - Test equipment

Detailed and Complete Alternative Models

Some alternative models to the MRF8P20140WHR5 include: - MRF8S18120HSR3 - MRF7S21170HSR5 - MRF6VP41KH

In conclusion, the MRF8P20140WHR5 is a high-power RF transistor with wide-ranging applications in RF communication and related fields. Its high power output, efficiency, and reliability make it a preferred choice for demanding RF amplification requirements.

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