PBSS3540E,115

Product Overview

• Category: Transistor
• Use: Switching applications
• Characteristics: High current capability, low VCE(sat), and excellent switching performance
• Package: SOT457 (SC-74)
• Essence: NPN Resistor-Equipped Transistor (RET)
• Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Collector-emitter voltage (VCEO): 40 V
• Collector current (IC): 1 A
• Power dissipation (Ptot): 625 mW
• DC current gain (hFE): 100 to 400
• Transition frequency (ft): 150 MHz

Detailed Pin Configuration

1. Base (B)
2. Emitter (E)
3. Collector (C)

Functional Features

• High current capability
• Low collector-emitter saturation voltage
• Fast switching speed
• Built-in resistor for simplified circuit design

Advantages and Disadvantages

Advantages

• Enhanced thermal performance
• Reduced component count in the circuit
• Improved reliability due to integrated resistor

Disadvantages

• Limited maximum collector current compared to some alternative models
• Moderate transition frequency

Working Principles

The PBSS3540E,115 is designed to amplify and switch electronic signals. When a small current flows into the base of the transistor, it controls a much larger current between the collector and emitter, allowing the device to act as a switch or amplifier.

Detailed Application Field Plans

The PBSS3540E,115 is suitable for a wide range of applications including: - Power management systems - Battery management circuits - LED lighting control - Portable electronics

Detailed and Complete Alternative Models

• PBSS4350E,115
• PBSS5350E,115
• PBSS6350E,115

In conclusion, the PBSS3540E,115 is a versatile NPN RET with high current capability and excellent switching performance. Its integrated resistor simplifies circuit design and enhances thermal performance, making it an ideal choice for various switching applications.

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