NXP USA Inc.
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PDTA114TS,126
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PDTA114TS,126

Product Overview

Category: Transistor
Use: Amplification and switching of electronic signals
Characteristics: Small signal NPN transistor, high current gain, low voltage drop
Package: SOT-23
Essence: High performance in a compact package
Packaging/Quantity: Tape and reel

Specifications

  • Type: NPN
  • VCEO: 100V
  • IC: 100mA
  • hFE: 100-300
  • Package Type: SOT-23
  • Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

  1. Base (B)
  2. Emitter (E)
  3. Collector (C)

Functional Features

  • High current gain
  • Low saturation voltage
  • Small package size

Advantages and Disadvantages

Advantages: - Compact size - High current gain - Low voltage drop

Disadvantages: - Limited power handling capability - Sensitivity to temperature variations

Working Principles

PDTA114TS,126 operates as a small signal NPN transistor, amplifying and switching electronic signals. When a small current flows into the base (B) terminal, it controls a larger current flowing between the collector (C) and emitter (E) terminals.

Detailed Application Field Plans

PDTA114TS,126 is suitable for applications requiring amplification and switching of electronic signals in compact designs. It can be used in audio amplifiers, signal processing circuits, and sensor interfaces.

Detailed and Complete Alternative Models

  • BC547
  • 2N2222
  • 2N3904
  • PN2222

This completes the entry for PDTA114TS,126, providing comprehensive information on its category, use, characteristics, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací PDTA114TS,126 v technických řešeních

  1. What is PDTA114TS,126?

    • PDTA114TS,126 is a high-performance NPN resistor-equipped transistor in a small SOT666 (SC-88) Surface-Mounted Device (SMD) plastic package.

  2. What are the typical applications of PDTA114TS,126?

    • Typical applications include high-speed switching and amplification in various technical solutions such as portable electronics, battery management systems, and sensor interfaces.

  3. What is the maximum collector current for PDTA114TS,126?

    • The maximum collector current for PDTA114TS,126 is 100mA.

  4. What is the maximum power dissipation for PDTA114TS,126?

    • The maximum power dissipation for PDTA114TS,126 is 200mW.

  5. What is the voltage rating for PDTA114TS,126?

    • The voltage rating for PDTA114TS,126 is 50V.

  6. Can PDTA114TS,126 be used in low-power applications?

    • Yes, PDTA114TS,126 can be used in low-power applications due to its low collector-emitter saturation voltage.

  7. Is PDTA114TS,126 suitable for surface-mount technology (SMT) applications?

    • Yes, PDTA114TS,126 is designed for surface-mount technology (SMT) applications, making it suitable for compact designs.

  8. Does PDTA114TS,126 have a high transition frequency (fT)?

    • Yes, PDTA114TS,126 has a high transition frequency (fT) of 250MHz, making it suitable for high-frequency applications.

  9. What are the temperature specifications for PDTA114TS,126?

    • The operating temperature range for PDTA114TS,126 is from -55°C to +150°C.

  10. Are there any recommended alternative components to PDTA114TS,126?

    • Some recommended alternative components to PDTA114TS,126 include PDTA144TS,126 and PDTA124TS,126, which offer similar performance characteristics.