PDTA143XE,135

Product Overview

Belongs to: Semiconductor Devices
Category: Transistor
Use: Amplification and Switching
Characteristics: Small signal NPN transistor, high current gain, low voltage drop
Package: SOT-416 (SC-75)
Essence: High-performance small signal transistor
Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

Collector-Base Voltage (VCBO): 50V
Collector-Emitter Voltage (VCEO): 50V
Emitter-Base Voltage (VEBO): 5V
Collector Current (IC): 100mA
Power Dissipation (Ptot): 200mW
Transition Frequency (ft): 250MHz

Detailed Pin Configuration

Emitter (E)
Base (B)
Collector (C)

Functional Features

High current gain
Low voltage drop
Small package size
Suitable for high-frequency applications

Advantages

Compact size
High performance
Versatile applications

Disadvantages

Limited power dissipation capability
Sensitive to overvoltage conditions

Working Principles

The PDTA143XE,135 is a small signal NPN transistor that operates by amplifying small input signals or acting as a switch in electronic circuits. When used as an amplifier, the base-emitter junction is forward-biased, allowing a small current to control a larger current flow between the collector and emitter. As a switch, it can be turned on and off by controlling the current flow through the base.

Detailed Application Field Plans

The PDTA143XE,135 is commonly used in audio amplifiers, signal processing circuits, and high-frequency applications such as RF amplifiers and oscillators. Its small size and high current gain make it suitable for portable electronic devices and compact circuit designs.

Detailed and Complete Alternative Models

BC847B,215
MMBT3904LT1G
2N3904BU

This completes the English editing encyclopedia entry structure format for PDTA143XE,135.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací PDTA143XE,135 v technických řešeních

What is PDTA143XE,135?
- PDTA143XE,135 is a high-performance NPN bipolar junction transistor (BJT) designed for use in general-purpose amplifier and switching applications.
What are the key specifications of PDTA143XE,135?
- The key specifications of PDTA143XE,135 include a maximum collector current of 100mA, a maximum collector-base voltage of 50V, and a maximum power dissipation of 200mW.
In what type of technical solutions can PDTA143XE,135 be used?
- PDTA143XE,135 can be used in a wide range of technical solutions including audio amplifiers, signal processing circuits, and low-power switching applications.
What are the typical operating conditions for PDTA143XE,135?
- The typical operating conditions for PDTA143XE,135 include a collector current of 10mA to 100mA, a collector-emitter voltage of 20V to 50V, and an ambient temperature range of -55°C to 150°C.
Can PDTA143XE,135 be used in low-power applications?
- Yes, PDTA143XE,135 is suitable for low-power applications due to its low collector current and power dissipation specifications.
What are the recommended circuit configurations for using PDTA143XE,135 as an amplifier?
- PDTA143XE,135 can be configured in common emitter or common collector configurations for amplifier applications.
Is PDTA143XE,135 suitable for battery-powered devices?
- Yes, PDTA143XE,135's low power dissipation makes it suitable for use in battery-powered devices where power efficiency is crucial.
Are there any specific considerations for PCB layout when using PDTA143XE,135?
- It is important to minimize lead lengths and keep input and output traces short to reduce parasitic effects and maintain signal integrity.
What are the typical failure modes of PDTA143XE,135?
- Common failure modes include thermal runaway under high-temperature conditions and breakdown due to excessive collector-base voltage.
Where can I find detailed application notes and reference designs for using PDTA143XE,135 in technical solutions?
- Detailed application notes and reference designs for PDTA143XE,135 can be found in the product datasheet, manufacturer's application guides, and online technical forums dedicated to electronic component applications.